Abstract: MEMs-based variable blazed gratings are provided for passive or active phase modulation and beam control in LIDAR among other applications. A system and method for modulating light uses a microelectromechanical structure having deformable diffractive elements. The light is directed to the diffractive elements which act to reflect the light as planar mirrors. Applying a predetermined electrostatic force corresponding to each diffractive element flexes each diffractive element independently from other diffractive elements. Each diffractive element is either flexed continuously through a range of deflected positions or held stably at a single deflected position to interfere with the light through phase changes imparted according to the laws of diffraction.

Abstract: A micro-electromechanical structure for modulating light beams includes multiple asymmetric deformable diffractive elements, each having an L-shaped cross section, split pedestal and flexible reflective member. The reflective member has an elongated shape, and a supported part and unsupported part. The split pedestal extends along the long dimension of the supported part of the reflective member and is anchored to a substrate which supports one or more electrodes or serves as an electrode. The diffractive element is movable between a non-energized position wherein the diffractive element acts to reflect a beam of light as a planar mirror, to an energized position wherein upon application of an electrostatic force, the diffractive element flexes independently about an axis parallel to the long dimension of each reflective member to vary a curvature of the reflective member to form a blazed grating.

Abstract: The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.

Abstract: A micro-electromechanical structure for modulating light beams includes multiple asymmetric deformable diffractive elements, each having an L-shaped cross section, split pedestal and flexible reflective member. The reflective member has an elongated shape, and a supported part and unsupported part. The split pedestal extends along the long dimension of the supported part of the reflective member and is anchored to a substrate which supports one or more electrodes or serves as an electrode. The diffractive element is movable between a non-energized position wherein the diffractive element acts to reflect a beam of light as a planar mirror, to an energized position wherein upon application of an electrostatic force, the diffractive element flexes independently about an axis parallel to the long dimension of each reflective member to vary a curvature of the reflective member to form a blazed grating.

Abstract: The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.

Abstract: A multi-layer stacked micro-electro-mechanical (MEMS) device that acts as a capacitive micromachined ultrasonic transducer (CMUT) with a hermetically sealed device cavity formed by a wafer bonding process with semiconductor and insulator layers. The CMUT design uses a doped Si SOI and wafer bonding fabrication method, and is composed of semiconductor layers, insulator layers, and metal layers. Conventional doped silicon may be used for electrode layers. Other suitable semi-conductor materials such as silicon carbide may be used for the electrode layers. The insulator may be silicon oxide, silicon nitride or other suitable dielectric.

Abstract: A muli-layer stacked micro-electro-mechanical (MEMS) device that acts as a capacitive micromachined ultrasonic transducer (CMUT) with a hermetically sealed device cavity formed by a wafer bonding process with semiconductor and insulator layers. The CMUT design uses a doped Si SOI and wafer bonding fabrication method, and is composed of semiconductor layers, insulator layers, and metal layers. Conventional doped silicon may be used for electrode layers. Other suitable semi-conductor materials such as silicon carbide may be used for the electrode layers. The insulator may be silicon oxide, silicon nitride or other suitable dielectric.