Abstract: A method includes receiving, by a processing device, data indicative of one or more defects of a substrate processing in a substrate processing system using a process recipe, the data having a data type. The method further includes processing the data using a trained machine learning model that outputs information about the one or more defects. The method further includes determining one or more possible root causes for the one or more defects based at least in part on the information. The method further includes outputting a sequence of maintenance operations to be performed on the substrate processing system based on the one or more possible root causes for the one or more defects.

Abstract: A method includes receiving first information about one or more defects of a substrate processed using a process recipe. The method further includes processing the first information using a trained machine learning model that outputs matches to historical defects and score values for the matches. The method further includes receiving user input selecting a subset of the one or more matches. The method further includes updating the trained machine learning model based on the user input. The method further includes reprocessing the first information using the updated trained machine learning model that outputs one or more updated matches to historical defects and updated score values for the matches. The method further includes outputting an indication of one or more maintenance operations associated with the one or more updated matches to resolve one or more root causes associated with at least one of the one or more updated matches.

Abstract: A load lock including sensing and recovery subsystems to remediate a measured condition within the load lock. The sensing subsystem can use a variety of sensors to measure the conditions within a processing chamber, and a computing subsystem can selectively activate a the recovery subsystem or remediation subsystem of the recovery subsystem to remediate an aspect of the measured conditions, such as chamber contamination, as deemed necessary based on the measured conditions. The remediation subsystem can include several mechanisms, including a gas purge of the chamber. The overall system can work to regulate chamber contamination, wafer contamination, or chamber component integrity.

Abstract: A system includes a material removal apparatus including a laser. The material removal apparatus is configured to perform a material removal operation with respect to a workpiece. The system further includes a vacuum system configured to provide suction during the material removal operation. The system further includes a manifold configured to remove debris from the workpiece responsive to the suction provided by the vacuum system. The manifold includes a plurality of vanes arranged radially around an open center portion of the manifold. The manifold further includes a shell at least partially enclosing the plurality of vanes.

Abstract: Substrate transfer robot blades used to engage and support a substrate during transfer include a blade body having a blade support surface and at least one pad having a top surface and an opposite bottom surface, a central opening extending from the top surface to the bottom surface, and a resilient portion formed from the at least one pad. The resilient portion formed from the at least one pad extends from and cantilevers from a side surface of the central opening of the at least one pad that is disposed directly on the side surface at the end of a long axis of the resilient portion. The resilient portion further includes a curved substrate contact surface on an outermost end of the resilient portion on which a substrate is supported when disposed on the substrate transfer robot blade.

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes: a support surface; and a plurality of substrate contact elements protruding from the support surface, wherein the plurality of substrate contact elements are formed of a material having a hardness less than or equal to a hardness of silicon, having a low adhesion, having a coefficient of static friction large enough to prevent sliding, having a surface roughness less than or equal to 10 Ra, and that is electrically conductive.

Abstract: Embodiments of substrate transfer robot blades to engage and support a substrate during transfer are provided herein. In some embodiments, a substrate transfer robot may include a blade body having a blade support surface; and a plurality of compliant pads, each comprising a contact surface and an opposite bottom surface supported by the body and arranged to support a substrate when disposed on the substrate transfer robot blade.

Abstract: Embodiments of substrate transfer robot blades to engage and support a substrate during transfer are provided herein. In some embodiments, a substrate transfer robot may include a blade body having a blade support surface; and a plurality of compliant pads, each comprising a contact surface and an opposite bottom surface supported by the body and arranged to support a substrate when disposed on the substrate transfer robot blade.

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes a support member; and a plurality of substrate contact elements protruding from the support member, wherein each of the plurality of substrate contact elements includes: a first contact surface to support a substrate when placed thereon; and a second contact surface extending from the first contact surface, wherein the second contact surface is adjacent a periphery of the substrate to prevent radial movement of the substrate, wherein the first contact surface is at a first angle with respect to the support member and the second contact surface is at a second angle with respect to the support member, and wherein the first angle is between about 3 degrees and 5 degrees.

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes a support member; and a plurality of substrate contact elements protruding from the support member, wherein each of the plurality of substrate contact elements includes: a first contact surface to support a substrate when placed thereon; and a second contact surface extending from the first contact surface, wherein the second contact surface is adjacent a periphery of the substrate to prevent radial movement of the substrate, wherein the first contact surface is at a first angle with respect to the support member and the second contact surface is at a second angle with respect to the support member, and wherein the first angle is between about 3 degrees and 5 degrees.

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes: a support surface; and a plurality of substrate contact elements protruding from the support surface, wherein the plurality of substrate contact elements are formed of a material having a hardness less than or equal to a hardness of silicon, having a low adhesion, having a coefficient of static friction large enough to prevent sliding, having a surface roughness less than or equal to 10 Ra, and that is electrically conductive.

Abstract: Embodiments of substrate transfer robot blades to engage and support a substrate during transfer are provided herein. In some embodiments, a substrate transfer robot may include a blade body having a blade support surface; and a plurality of compliant pads, each comprising a contact surface and an opposite bottom surface supported by the body and arranged to support a substrate when disposed on the substrate transfer robot blade.

Abstract: Embodiments of the invention provide methods for reducing formation of void-type defects on the surface of a substrate during electrochemical plating. Embodiments of the invention provide methods to improve the wetting of a substrate surface prior to immersion and thereby minimize adhesion of bubbles to the substrate surface during immersion. A thin uniform metal oxide is formed on a metal layer on the substrate immediately prior to substrate immersion. In one aspect, exposing the substrate to an oxygen-containing gas, e.g. air, forms the metal oxide. The oxygen-containing gas may be flowed over the substrate or the substrate may be rotated at a high rate in the presence of an oxygen-containing gas. In another aspect, non-uniform metal oxides are first removed from the substrate in an anneal process and a thin uniform metal oxide is subsequently re-formed. An optimized substrate immersion method may also be used to further reduce void defects.

Abstract: Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

Abstract: Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

Abstract: Improved targets for use in DC.sub.-- magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

Abstract: Improved targets for use in DC.sub.-- magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.