Patents by Inventor Glenda Zhang

Glenda Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128167
    Abstract: A multiple-channel protection device and associated methods thereof. The device includes a first lead having a first chip attachment portion and a second chip attachment portion, a second lead having a third chip attachment portion, and a third lead having a fourth chip attachment portion. A first semiconductor chip is configured to be conductively coupled to the first chip attachment portion and the third chip attachment portion. A second semiconductor chip is configured to be conductively coupled to the second chip attachment portion and the fourth chip attachment portion.
    Type: Application
    Filed: October 13, 2023
    Publication date: April 18, 2024
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Glenda Zhang, Lei She, Chao Gao
  • Publication number: 20240096872
    Abstract: A TVS device may include a substrate, comprising a polarity of a first type, a first dopant layer, disposed on a first main surface of the substrate, and comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate. The TVS device may further include a second dopant layer, disposed on a second main surface of the substrate, opposite the first main surface, the second layer comprising the polarity of the first type, and a patterned layer, disposed on the second main surface of the substrate, the patterned layer comprising the polarity of the second type, wherein the patterned layer is interspersed with the second layer.
    Type: Application
    Filed: August 17, 2023
    Publication date: March 21, 2024
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Jifeng Zhou, Glenda Zhang, Chao Gao
  • Publication number: 20240055312
    Abstract: An overvoltage protection device may include an n-type semiconductor substrate, a p-type layer disposed atop the n-type semiconductor substrate, and a passivation region formed in the n-type semiconductor substrate and the p-type layer, wherein the passivation region comprises a semi-insulating polycrystalline silicon (SIPOS) layer.
    Type: Application
    Filed: August 2, 2023
    Publication date: February 15, 2024
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Glenda Zhang, Lucas Zhang, Lei He
  • Publication number: 20240047317
    Abstract: Provided herein are package structures including a first lead frame having a first pedestal and a first lead extending from the first pedestal. A first perimeter ridge defines a first recessed area in a first main side of the first pedestal, wherein a die pad is positioned within the first recessed area. The package structure may further include a chip layer having a first main side opposite a second main side, wherein the second main side is in abutment with the first perimeter ridge of the pedestal of the first lead frame. The package structure may further include a clip including a second pedestal and a lead connector extending from the second pedestal, wherein a second perimeter ridge defines a second recessed area in a second main side of the second pedestal, and wherein the second perimeter ridge is in abutment with the first main side of the chip layer.
    Type: Application
    Filed: July 27, 2023
    Publication date: February 8, 2024
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Lucas Zhang, Chao Gao, Glenda Zhang