Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.

Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.

Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.

Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.

Abstract: Float glass compositions adapted for chemical strengthening, and methods of making the same. Certain example embodiments of this invention relate to such a glass composition having improved ion-exchanged, surface durability, and/or mechanical properties for use in applications where higher strength and improved durability of the glass are desired.

Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.

Abstract: Float glass compositions adapted for chemical strengthening, and methods of making the same. Certain example embodiments of this invention relate to such a glass composition having improved ion-exchanged, surface durability, and/or mechanical properties for use in applications where higher strength and improved durability of the glass are desired.

Abstract: A thermochromic window, including: a first glass substrate, a transparent conductive film applied to the first glass substrate, a silicone resin layer applied to the conductive film, a second glass substrate, and a power source which supplies power to the conductive film, the silicone resin layer including vanadium oxide (e.g., VO2) nanoparticles which are encapsulated in a silica inclusive (e.g., SiO2) shell.

Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.

Abstract: A thermochromic window, including: a first glass substrate, a transparent conductive film applied to the first glass substrate, a silicone resin layer applied to the conductive film, a second glass substrate, and a power source which supplies power to the conductive film, the silicone resin layer including vanadium oxide (e.g., VO2) nanoparticles which are encapsulated in a silica inclusive (e.g., SiO2) shell.

Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.

Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.

Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.

Abstract: The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10?2-10?3 g.m?2d?1 and is appropriate for very low permeability applications.

Abstract: A method and process for forming a barrier layer on a flexible substrate are provided. A continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. Also provided is a coated flexible substrate comprising a barrier layer based on the structural unit SiC:H, or SiOC:H, or SiOCN:H. The barrier layer possesses high density and low porosity. The barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10?2-10?4 g·m?2d?1 and is appropriate for very low permeability applications.

Abstract: The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

Abstract: The present invention relates to a process for vapor depositing a low dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

Abstract: A high-selectivity via etching process. The process includes the steps of: forming an etchstop layer 840 of a material selected from the group consisting of Ti--Al, Ti--Al--N, Ta--Al, Al--N, Ti--Al/Ti--N, Ti--Al--N/Ti--N, Ta--Al/Ti--N, and Ti--Al/Ti--Al--N; forming a dielectric layer over the etchstop layer; and etching the dielectric layer with a fluorine-bearing etchant.

Abstract: A hybrid semiconductor device which comprises a semiconductor substrate having electrical devices therein with a plurality of spaced apart relatively rigid standoffs of electrically insulating material disposed over the substrate. Each of the standoffs has a substantially planar exposed surface remote from the substrate. A first layer of electrically insulating material more resilient than the standoffs is disposed over the substrate and between the standoffs and has an upper surface coplanar with the planar exposed surfaces of the standoffs. A semiconductor superstrate is secured to the first layer of electrically insulating material, the superstrate containing electrical devices. A connection connects the electrical devices contained in the superstrate to the electrical devices in the substrate.

Abstract: A method of making a hybrid semiconductor device and the device comprising providing a semiconductor substrate having electrical devices therein, providing a first resilient layer of electrically insulating material over the substrate which can be disposed directly onto the substrate with a substantially planar exposed surface, providing a second resilient layer of electrically insulating material over the first resilient layer which can be disposed directly onto the first layer with a substantially planar exposed surface, the second layer having a relatively resilient state and a rigid state, providing resilient standoff from the third resilient layer at spaced locations on the second layer by removing predetermined portions of the third layer, securing a semiconductor superstrate to the semiconductor device, forming electrical devices on the superstrate, and then connecting the electrical devices on the superstrate to the electrical devices on the substrate.