Abstract: A switching apparatus, as may be configured to actuate stacked MEMS switches, may include a switching circuitry (34) including a MEMS switch (36) having a beam (16) made up of a first movable actuator (17) and a second movable actuator (19) electrically connected by a common connector (20) and arranged to selectively establish an electrical current path through the first and second movable actuators in response to a gate control signal applied to the gates of the switch to actuate the movable actuators. The apparatus may further include a gating circuitry (32) to generate the gate control signal applied to gates of the switch. The gating circuitry may include a driver channel (40) electrically coupled to the common connector and may be adapted to electrically float with respect to a varying beam voltage, and may be electrically referenced between the varying beam voltage and a local electrical ground of the gating circuitry.

Abstract: A method of Raman detection for a portable, integrated spectrometer instrument includes directing Raman scattered photons by a sample to an avalanche photodiode (APD), the APD configured to generate an output signal responsive to the intensity of the Raman scattered photons incident thereon. The output signal of the APD is amplified and passed through a discriminator so as to reject at least one or more of amplifier noise and dark noise. A number of discrete output pulses within a set operational range of the discriminator is counted so as to determine a number of photons detected by the APD.

Abstract: A method of Raman detection for a portable, integrated spectrometer instrument includes directing Raman scattered photons by a sample to an avalanche photodiode (APD), the APD configured to generate an output signal responsive to the intensity of the Raman scattered photons incident thereon. The output signal of the APD is amplified and passed through a discriminator so as to reject at least one or more of amplifier noise and dark noise. A number of discrete output pulses within a set operational range of the discriminator is counted so as to determine a number of photons detected by the APD.

Abstract: A method of Raman detection for a portable, integrated spectrometer instrument includes directing Raman scattered photons by a sample to an avalanche photodiode (APD), the APD configured to generate an output signal responsive to the intensity of the Raman scattered photons incident thereon. The output signal of the APD is amplified and passed through a discriminator so as to reject at least one or more of amplifier noise and dark noise. A number of discrete output pulses within a set operational range of the discriminator is counted so as to determine a number of photons detected by the APD.

Abstract: A micro-electromechanical system (MEMS) based current & magnetic field sensor includes a MEMS-based magnetic field sensing component having a capacitive magneto-MEMS component, a compensator and an output component for sensing magnetic fields and for providing, in response thereto, an indication of the current present in a respective conductor to be measured. In one embodiment, first and second mechanical sense components are electrically conductive and operate to sense a change in a capacitance between the mechanical sense components in response to a mechanical indicator from a magnetic-to-mechanical converter.

Abstract: A method of Raman detection for a portable, integrated spectrometer instrument includes directing Raman scattered photons by a sample to an avalanche photodiode (APD), the APD configured to generate an output signal responsive to the intensity of the Raman scattered photons incident thereon. The output signal of the APD is amplified and passed through a discriminator so as to reject at least one or more of amplifier noise and dark noise. A number of discrete output pulses within a set operational range of the discriminator is counted so as to determine a number of photons detected by the APD.

Abstract: An integrated spectrometer instrument, including an optical source formed on a chip, the optical source configured to generate an incident optical beam upon a sample to be measured. Collection optics formed on the chip are configured to receive a scattered optical beam from the sample, and filtering optics formed on the chip are configured to remove elastically scattered light from the scattered optical beam at a wavelength corresponding to the optical source. A tunable filter formed on the chip is configured to pass selected wavelengths of the scattered optical beam, and a photo detector device formed on the chip is configured to generate an output signal corresponding to the intensity of photons passed through the tunable filter.

Abstract: A micro-electro-mechanical system (MEMS) current sensor for sensing a magnetic field produced by an electrical current flowing in a conductor includes a first fixed element and a moving element. The moving element is spaced away from the first fixed element and is movable relative to the fixed element responsive to a magnetic field produced by an electrical current flowing in a conductor for providing a mechanical indication of a strength of the magnetic field. The sensor also includes a tunneling current generator for generating a tunneling current between the first fixed element and the moving element and a tunneling current monitor for monitoring a change in the tunneling current responsive to the mechanical indication to provide an indication of a value of the electrical current in the conductor.

Abstract: A photonic crystal based collection probe is provided. The probe includes a photonic crystal configured to guide and condition a beam of Raman scattered photons. Further, the device includes a spectrograph in optical communication with the photonic crystal and configured to receive Raman scattering from the photonic crystal. The device may be employed in a Raman spectrometer system.

Abstract: A micro-electromechanical system (MEMS) current sensor is described as including a first conductor, a magnetic field shaping component for shaping a magnetic field produced by a current in the first conductor, and a MEMS-based magnetic field sensing component including a magneto-MEMS component for sensing the shaped magnetic field and, in response thereto, providing an indication of the current in the first conductor. A method for sensing a current using MEMS is also described as including shaping a magnetic field produced with a current in a first conductor, sensing the shaped magnetic field with a MEMS-based magnetic field sensing component having a magneto-MEMS component magnetic field sensing circuit, and providing an indication of the current in the first conductor.

Abstract: A micro-electromechanical system (MEMS) current sensor is described as including a first conductor, a magnetic field shaping component for shaping a magnetic field produced by a current in the first conductor, and a MEMS-based magnetic field sensing component including a magneto-MEMS component for sensing the shaped magnetic field and, in response thereto, providing an indication of the current in the first conductor. A method for sensing a current using MEMS is also described as including shaping a magnetic field produced with a current in a first conductor, sensing the shaped magnetic field with a MEMS-based magnetic field sensing component having a magneto-MEMS component magnetic field sensing circuit, and providing an indication of the current in the first conductor.

Abstract: A device comprising an array of sensors and a multiplicity of bus lines, each sensor being electrically connected to a respective bus line and comprising a respective multiplicity of groups of micromachined sensor cells, the sensor cell groups of a particular sensor being electrically coupled to each other via the bus line to which that sensor is connected, each sensor cell group comprising a respective multiplicity of micromachined sensor cells that are electrically interconnected to each other and not switchably disconnectable from each other, the device further comprising means for isolating any one of the sensor cell groups from its associated bus line and in response to any one of the micromachined sensor cells of that sensor cell group being short-circuited to ground. In one implementation, the isolating means comprise a multiplicity of fuses.

Abstract: A micro-electromechanical system (MEMS) based current & magnetic field sensor includes a MEMS-based magnetic field sensing component a structural component comprising a silicon substrate and a compliant layer comprising a material selected from the group consisting of silicon dioxide and silicon nitride, a magnetic-to-mechanical converter coupled to the structural component to provide a mechanical indication of the magnetic field, and a strain responsive component coupled to the structural component to sense the mechanical indication and to provide an indication of the current in the current carrying conductor in response thereto.

Abstract: A micro-electromechanical system (MEMS) based current & magnetic field sensor includes a MEMS-based magnetic field sensing component having a capacitive magneto-MEMS component, a compensator and an output component for sensing magnetic fields and for providing, in response thereto, an indication of the current present in a respective conductor to be measured. In one embodiment, first and second mechanical sense components are electrically conductive and operate to sense a change in a capacitance between the mechanical sense components in response to a mechanical indicator from a magnetic-to-mechanical converter.

Abstract: A micro-electromechanical system (MEMS) current sensor is described as including a first conductor, a magnetic field shaping component for shaping a magnetic field produced by a current in the first conductor, and a MEMS-based magnetic field sensing component including a magneto-MEMS component for sensing the shaped magnetic field and, in response thereto, providing an indication of the current in the first conductor. A method for sensing a current using MEMS is also described as including shaping a magnetic field produced with a current in a first conductor, sensing the shaped magnetic field with a MEMS-based magnetic field sensing component having a magneto-MEMS component magnetic field sensing circuit, and providing an indication of the current in the first conductor.

Abstract: According to some embodiments, a Microelectromechanical System (MEMS) sensor includes a sensing material on a spring element. The sensor may also include a detector adapted to determine a resonant frequency associated with the spring element, wherein the resonant frequency changes upon the exposure of the sensing material to an analyte.

Abstract: A microvalve and a method of forming a diaphragm stop for a microvalve. The microvalve includes a first layer and a diaphragm member to control the flow of fluid through the microvalve. The method comprises the step of forming a contoured shaped recess extending inward from a surface of the layer by using a laser to remove material in a series of areas, at successively greater depths extending inward from said surface. Preferably, the recess has a dome shape, and may be formed by a direct-write laser operated via a computer aided drawing program running on a computer. For example, CAD artwork files, comprising a set of concentric polygons approximating circles, may be generated to create the dome structure. The laser ablation depth can be controlled by modifying the offset step distance of the polygons and equating certain line widths to an equivalent laser tool definition.

Abstract: A method of fabricating an integrated optoelectronic circuit. The method includes positioning a microchip on a first flexible dielectric substrate. A polymer electro-optic waveguide is positioned on or within the first flexible dielectric substrate. A ground electrode is positioned along the electro-optic waveguide. A signal electrode is positioned along the electro-optic waveguide opposite the ground electrode. A first patterned metallization layer is applied to the first flexible dielectric substrate. A second flexible dielectric substrate is positioned along the first flexible dielectric substrate. A plurality of via openings are provided in the first and second flexible dielectric substrates. A second patterned metallization layer is applied to the second flexible dielectric substrate.

Abstract: A method of fabricating an integrated optoelectronic circuit. The method includes positioning a microchip on a first flexible dielectric substrate. A polymer electro-optic waveguide is positioned on or within the first flexible dielectric substrate. A ground electrode is positioned along the electro-optic waveguide. A signal electrode is positioned along the electro-optic waveguide opposite the ground electrode. A first patterned metallization layer is applied to the first flexible dielectric substrate. A second flexible dielectric substrate is positioned along the first flexible dielectric substrate. A plurality of via openings are provided in the first and second flexible dielectric substrates. A second patterned metallization layer is applied to the second flexible dielectric substrate.

Abstract: The invention comprises a novel combination of microwave and photonic packaging to arrive a compact, self contained MZI modulator. The nature of the NLO polymer, that is, its large electro-optic coefficient reduces the drive requirements for the integrated power amplifier, allowing a small to medium power amplifier to be used. Microwave high density interconnect (HDI) packaging techniques allow the medium power amplifier to be fabricated into a small assembly, which can be mounted directly to the MZI substrate. The integrated amplifier and modulator provides a significant reduced size and lower power, and high bandwidth advantage when compared with existing devices based on inorganic materials.