Patents by Inventor Glenn David Raskin

Glenn David Raskin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device
    Patent number: 9577025
    Abstract: Some features pertain to an integrated device that includes a substrate, several metal layers coupled to the substrate, several dielectric layers coupled to the substrate, and a redistribution portion coupled to one of the metal layers. The redistribution portion includes a first metal redistribution layer, an insulation layer coupled to the first metal redistribution layer, and a second metal redistribution layer coupled to the insulation layer. The first metal redistribution layer, the insulation layer, and the second metal redistribution layer are configured to operate as a capacitor in the integrated device. In some implementations, the capacitor is a metal-insulator-metal (MIM) capacitor.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: February 21, 2017
    Assignee: QUALCOMM Incorporated
    Inventors: Shiqun Gu, Ryan David Lane, Glenn David Raskin, Shree Krishna Pandey
  • METAL-INSULATOR-METAL (MIM) CAPACITOR IN REDISTRIBUTION LAYER (RDL) OF AN INTEGRATED DEVICE
    Publication number: 20150221714
    Abstract: Some features pertain to an integrated device that includes a substrate, several metal layers coupled to the substrate, several dielectric layers coupled to the substrate, and a redistribution portion coupled to one of the metal layers. The redistribution portion includes a first metal redistribution layer, an insulation layer coupled to the first metal redistribution layer, and a second metal redistribution layer coupled to the insulation layer. The first metal redistribution layer, the insulation layer, and the second metal redistribution layer are configured to operate as a capacitor in the integrated device. In some implementations, the capacitor is a metal-insulator-metal (MIM) capacitor.
    Type: Application
    Filed: February 14, 2014
    Publication date: August 6, 2015
    Applicant: QUALCOMM Incorporated
    Inventors: Shiqun Gu, Ryan David Lane, Glenn David Raskin, Shree Krishna Pandey