Abstract: Methods for detecting defective pixels in imaging arrays involve establishing probabilities that individual pixels are defective and updating those probabilities by analysing images acquired by the imaging arrays. Probabilities may be evaluated for each of two or more defect conditions. The methods may be used to detect defects such as stuck-low, stuck-high, high-sensitivity, low sensitivity, hot, and defect-free conditions. Other more complicated defect conditions can also be detected. Apparatus for detecting defective pixels may be integrated with a camera or other imaging device or provided separately.

Abstract: Methods for detecting defective pixels in imaging arrays involve establishing probabilities that individual pixels are defective and updating those probabilities by analysing images acquired by the imaging arrays. Probabilities may be evaluated for each of two or more defect conditions. The methods may be used to detect defects such as stuck-low, stuck-high, high-sensitivity, low sensitivity, hot, and defect-free conditions. Other more complicated defect conditions can also be detected. Apparatus for detecting defective pixels may be integrated with a camera or other imaging device or provided separately.

Abstract: An angular filter is provided, including a straight tunnel within a material, the tunnel having a roughened surface. When scattered light enters the tunnel, and strikes the roughened surface at a shallow angle, the scatter light is further scattered within the tunnel, striking the surface of the tunnel a multiplicity of times. Each such strike partially absorbs the light ray, such that the intensity of the scattered light exiting the tunnel is minimized.

Abstract: A thermal inorganic resist for lithographic processes and image creation is disclosed. In one embodiment an In layer of 15 nm is deposited, followed by a Bi layer of 15 nm. Upon exposure to a optical light pulse of sufficient intensity the optical absorption heats the film above the eutectic melting point (110° C. for BiIn) and the resist forms an alloy in the exposed area, replicating patterns projected on its surface. Optical characteristics of the alloyed layers are in these resists typically different from the unexposed layers creating a visual image of the exposure pattern before the development etch aiding in exposure control. The resist layer is then stripped, leaving the pattern layer on the substrate. In resists showing significant optical differences (such as BiIn) after exposure this same material can be used to create images for data storage, and, when transparent, photomasks for optical lithography.

Abstract: A thermal inorganic resist for lithographic processes and image creation is disclosed. In one embodiment an In layer of 15 nm is deposited, followed by a Bi layer of 15 nm. Upon exposure to a optical light pulse of sufficient intensity the optical absorption heats the film above the eutectic melting point (110° C. for BiIn) and the resist forms an alloy in the exposed area, replicating patterns projected on its surface. Optical characteristics of the alloyed layers are in these resists typically different from the unexposed layers creating a visual image of the exposure pattern before the development etch aiding in exposure control. The resist layer is then stripped, leaving the pattern layer on the substrate. In resists showing significant optical differences (such as BiIn) after exposure this same material can be used to create images for data storage, and, when transparent, photomasks for optical lithography.