Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)×(SiH2?)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Abstract: Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Abstract: Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x?3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Abstract: Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Abstract: Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x?3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Abstract: Methods of using Si-containing film forming compositions to deposit silicon-containing films using vapor deposition processes are disclosed. The disclosed Si-containing film forming composition comprises an amino(bromo)silane precursor having the formula: SiHxBry(NR1R2)4?x?y wherein x=0, 1 or 2; y=1, 2 or 3; x+y<4; each R1 and R2 is independently selected from C1-C6 alkyl, aryl, or hetero group; and R1 and R2 may be joined to form a cyclic nitrogen-containing heterocycle. The disclosed Si-containing film forming compositions include an amino(bromo)silane precursor selected from the group consisting of SiH2Br(NEt2), SiH2Br(N(iPr)2), SiH2Br(N(iBu)2) and SiBr(NMe2)3.

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted halocarbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

Abstract: Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR)n-E)SiH2—SiHx(E-(CR)n-E)3-x, wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR)n-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Abstract: Methods of synthesizing Si—H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.