Patents by Inventor Glenn Mortland

Glenn Mortland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated nonvolatile resistive memory elements
    Patent number: 8735863
    Abstract: A resistive memory apparatus provides resistive memory material between conductive traces on a substrate or in a film stack on a substrate. The resistive memory apparatus may provide a sealed cavity or may utilize material obviating the need for the cavity. Methods and materials utilized to form the resistive memory apparatus are compatible with current microelectronic fabrication techniques. The resistive memory apparatus is nonvolatile or requires no power to maintain a programmed state. The resistive memory device may also be directly integrated with other microelectronic components.
    Type: Grant
    Filed: January 23, 2012
    Date of Patent: May 27, 2014
    Assignee: Privatran
    Inventors: Burt Fowler, Glenn Mortland
  • SIOX-BASED NONVOLATILE MEMORY ARCHITECTURE
    Publication number: 20130264536
    Abstract: Various embodiments of the present invention pertain to memresistor cells that comprise: (1) a substrate; (2) an electrical switch associated with the substrate; (3) an insulating layer; and (3) a resistive memory material. The resistive memory material is selected from the group consisting of SiOx, SiOxH, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal or greater than 1 or equal or less than 2. Additional embodiments of the present invention pertain to memresistor arrays that comprise: (1) a plurality of bit lines; (2) a plurality of word lines orthogonal to the bit lines; and (3) a plurality of said memresistor cells positioned between the word lines and the bit lines. Further embodiments of the present invention provide methods of making said memresistor cells and arrays.
    Type: Application
    Filed: September 8, 2011
    Publication date: October 10, 2013
    Applicants: Privatran, Inc., William Marsh Rice University
    Inventors: James M. Tour, Jun Yao, Burt Fowler, Glenn Mortland
  • INTEGRATED NONVOLATILE RESISTIVE MEMORY ELEMENTS
    Publication number: 20130075683
    Abstract: A resistive memory apparatus provides resistive memory material between conductive traces on a substrate or in a film stack on a substrate. The resistive memory apparatus may provide a sealed cavity or may utilize material obviating the need for the cavity. Methods and materials utilized to form the resistive memory apparatus are compatible with current microelectronic fabrication techniques. The resistive memory apparatus is nonvolatile or requires no power to maintain a programmed state. The resistive memory device may also be directly integrated with other microelectronic components.
    Type: Application
    Filed: January 23, 2012
    Publication date: March 28, 2013
    Inventors: Burt Fowler, Glenn Mortland