Abstract: In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of local crystal modifications in the first Group IV semiconductor in an array. An array of local crystal modifications is formed in the first Group IV semiconductor in accordance with the pattern. The local crystal modifications induce overlapping strain fields that increase the bandgap of the first Group IV semiconductor, create an energy band barrier against transport of minority carriers across the first region. A second region that includes a second Group IV semiconductor that has a bandgap and is doped with a second dopant of a second electrical conductivity type opposite the first conductivity type is formed. Semiconductor devices formed in accordance with this method also are described.

Abstract: In one aspect, a semiconductor device includes a p-region and an n-region. The p-region includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region of local crystal modifications inducing localized strain that increases the bandgap of the first Group IV semiconductor and creates a conduction band energy barrier against transport of electrons across the p-region. The n-region includes a second Group IV semiconductor that has a bandgap and is doped with an n-type dopant, and a second region of local crystal modifications inducing localized strain that increases the bandgap of the second Group IV semiconductor and creates a valence band energy barrier against transport of holes across the n-region.

Abstract: The split-beam optical thickness gauge (OTG) measures the height difference of two adjacent surfaces. Low-coherence light is generated by the low-coherence light source. The split-beam probe head receives the low-coherence light and splits the incoming low-coherence light into a primary beam and walk-off beam. The primary beam shines upon a first surface and is reflected back up into the split-beam probe head. The walk-off beam shines upon a second surface and is reflected back up into the split-beam probe head. Spatial separation between the primary beam and the walk-off beam ensures that each beam shines substantially on only one of the surfaces. An incorporated polarizer assures that the primary and walk-off beams interfere. The reflected light returns to the autocorrelator and is detected so that distance measurements can be determined based upon a change in the path difference between the reflected primary beam and the walk-off beam.

Abstract: The split-beam optical thickness gauge (OTG) measures the height difference of two adjacent surfaces. Low-coherence light is generated by the low-coherence light source. The split-beam probe head receives the low-coherence light and splits the incoming low-coherence light into a primary beam and walk-off beam. The primary beam shines upon a first surface and is reflected back up into the split-beam probe head. The walk-off beam shines upon a second surface and is reflected back up into the split-beam probe head. Spatial separation between the primary beam and the walk-off beam ensures that each beam shines substantially on only one of the surfaces. An incorporated polarizer assures that the primary and walk-off beams interfere. The reflected light returns to the autocorrelator and is detected so that distance measurements can be determined based upon a change in the path difference between the reflected primary beam and the walk-off beam.