Abstract: A method for increasing the production yield of semiconductor devices having copper metallurgy planarized by a chemical-mechanical planarization process which includes a slurry that contains a conductor passivating agent, like benzotriazole, wherein a non-oxidizing anneal is used to remove any residue which might interfere with mechanical probing of conductive lands on the substrate prior to further metallization steps. The anneal may be performed by any of several techniques including a vacuum chamber, a standard furnace or by rapid thermal annealing.

Abstract: A method of controlling the resistance and improving the low temperature tolerance of a polysilicon resistor is provided. The method of the present invention employs a second annealing step after one of the high temperature (about 800° C. or above) device activation anneals. That is, the second annealing step can be used after source/drain activation, emitter activation or silicide formation. In accordance with the present invention, if a low temperature second annealing step below about 800° C. is performed after the high temperature device activation anneal, the resistance of the resistor increases, whereas when the second annealing temperature is higher than about 800° C., the resistance of the resistor decreases.