Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Abstract: Contaminants are removed from a surface of a substrate by applying a fluid to the surface; lowering the temperature of the fluid to form a solid layer of the fluid and entrap contaminants therein; and applying energy to the layer and/or substrate to cause the layer containing the contaminants to separate from the surface.

Abstract: A method for stopping chemical processing of a semiconductor wafer in an emergency included the steps of: 1) placing a chemical having a water concentration of about 92% or less in a tank; 2) processing a semiconductor wafer with the chemical in the process tank; 3) detecting a malfunction in the processing; 4) quick draining the chemical from the process tank; and 5) rinsing the wafer in the process tank with a rinsing material to stop chemical action. Optionally, the method may include recycling the drained chemical from a storage tank to the process tank for use in a subsequent process step.

Abstract: Contaminants are removed from a surface of a substrate by applying a fluid to the surface; lowering the temperature of the fluid to form a solid layer of the fluid and entrap contaminants therein; and applying energy to the layer and/or substrate to cause the layer containing the contaminants to separate from the surface.

Abstract: A method for removing one or more particles from a surface of an object is provided. The method has first and second steps of detecting and locating the one or more particles on the surface of the object. In a third step, focused energy is directed onto one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface. In preferred variations of the method of the present invention, the object is a semiconductor wafer and the directed focused energy is in the form of a laser. Also provided is an apparatus for removing the plurality of particles from the surface of the object. The apparatus includes a detector for detecting and locating the plurality of particles on the surface of the object, and a laser for directing focused energy on one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface.

Abstract: A method for removing one or more particles from a surface of an object is provided. The method has first and second steps of detecting and locating the one or more particles on the surface of the object. In a third step, focused energy is directed onto one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface. In preferred variations of the method of the present invention, the object is a semiconductor wafer and the directed focused energy is in the form of a laser. Also provided is an apparatus for removing the plurality of particles from the surface of the object. The apparatus includes a detector for detecting and locating the plurality of particles on the surface of the object, and a laser for directing focused energy on one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface.

Abstract: An array of ultrasonic or megasonic transducers is used to clean a substrate. An interference signal that is the superposition of the signals from each transducer enhances the cleaning. The system improves cleaning by providing a higher intensity beam than is available from uncoupled transducers to facilitate removal of smaller particles. In addition, the beam can be swept across the substrate to provide a uniform cleaning of the entire surface, avoiding dead spots. The system can be adapted for use in a vessel or for single wafer processing with a stream of fluid or a puddle of fluid.

Abstract: A silicate glass is selectively etched employing a composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include water.

Abstract: A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH4OH:H2O2) solution or a dilute solution such as a 5:x:1 to 200:x:l solution wherein x is 0.025 to 2.

Abstract: Silicon oxide is removed from an article employing a liquid composition containing a fluoride-containing compound, organic solvent, and water. The methods of the invention are especially useful for removal of silicon oxide formed by thermal oxidation of a silicon substrate.

Abstract: A forced plug process for high aspect ratio structures. The process comprises the steps of providing a liquid plug in a high aspect ratio structure; increasing a gas pressure to force the liquid plug down into the high aspect ratio structure; and suddenly decreasing the gas pressure allowing the liquid plug to be ejected from the high aspect ratio structure. The process is useful for removing unwanted particles from a high aspect ratio structure, as well as for etching and coating the side walls of the structure.

Abstract: A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH.sub.4 OH:H.sub.2 O.sub.2) solution or a dilute solution such as a 5:x:1 to 200:x:1 solution wherein x is 0.025 to 2.