Abstract: The present invention is a new formulation and process for treating TiN semiconductor devices having a high aspect ratio structure formed thereon. The new composition is designed to be used in the chip making process between cleaning a wet etched memory device and its final rinse/drying process. It is intended to include the treatment in order to prevent collapse of the high aspect ratio TiN structure found on the semiconductor device.

Abstract: A composition is provided that is effective for removing post etch treatment (PET) polymeric films and photoresist from semiconductor substrates. The composition exhibits excellent polymer film removal capability while maintaining compatibility with copper and low-? dielectrics and contains water, ethylene glycol, a glycol ether solvent, morpholinopropylamine and a corrosion inhibiting compound and optionally one or more metal ion chelating agent, one or more other polar organic solvent, one or more tertiary amine, one or more aluminum corrosion inhibition agent, and one or more surfactant.

Abstract: The present invention is a new formulation and process for treating TiN semiconductor devices having a high aspect ratio structure formed thereon. The new composition is designed to be used in the chip making process between cleaning a wet etched memory device and its final rinse/drying process. It is intended to include the treatment in order to prevent collapse of the high aspect ratio TiN structure found on the semiconductor device.

Abstract: A composition is provided that is effective for removing post etch treatment (PET) polymeric films and photoresist from semiconductor substrates. The composition exhibits excellent polymer film removal capability while maintaining compatibility with copper and low-? dielectrics and contains water, ethylene glycol, a glycol ether solvent, morpholinopropylamine and a corrosion inhibiting compound and optionally one or more metal ion chelating agent, one or more other polar organic solvent, one or more tertiary amine, one or more aluminum corrosion inhibition agent, and one or more surfactant.

Abstract: A class of bioinspired, cross linking polymers, created by working catechol functionalities into the backbone of a bulk polymer, is disclosed. Varied cross linking groups may be incorporated into different polymer backbones, and subsequently reacted with an array of reagents. An adhesive composition comprising a copolymer, the copolymer comprising pendant dihydroxyphenyl groups; and a crosslinking agent selected from the group consisting of, for example, oxidants, enzymes, metals, and light. A method of preparing an adhesive composition comprising copolymerizing a first monomer comprising pendant dihydroxy-protected dihydroxyphenyl groups; deprotecting the dihydroxy-protected dihydroxyphenyl groups; crosslinking the dihydroxyphenyl groups with a crosslinking agent.

Abstract: A cleaning composition for cleaning microelectronic or nanoelectronic devices, the cleaning composition having HF as the sole acid and sole fluoride compound in the composition, at least one primary solvent selected from the group consisting of sulfones and selenones, at least one polyhydroxyl alkyl or aryl alcohol co-solvent having metal ion complexing or binding sites, and water, and optionally at least one phosphonic acid corrosion inhibitor compound and the is free of amines, bases and other salts.

Abstract: A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.

Abstract: A highly aqueous acidic cleaning composition for copper oxide etch removal from Cu-dual damascene microelectronic structures and wherein that composition prevents or substantially eliminates copper redeposition on the Cu-dual damascene microelectronic structure.

Abstract: A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.

Abstract: A cleaning composition for cleaning microelectronic or nanoelectronic devices, the cleaning composition having HF as the sole acid and sole fluoride compound in the composition, at least one primary solvent selected from the group consisting of sulfones and selenones, at least one polyhydroxyl alkyl or aryl alcohol co-solvent having metal ion complexing or binding sites, and water, and optionally at least one phosphonic acid corrosion inhibitor compound and the is free of amines, bases and other salts.

Abstract: A highly aqueous acidic cleaning composition for copper oxide etch removal from Cu-dual damascene microelectronic structures and wherein that composition prevents or substantially eliminates copper redeposition on the Cu-dual damascene microelectronic structure.

Abstract: A class of bioinspired, cross linking polymers, created by working catechol functionalities into the backbone of a bulk polymer, is disclosed. Varied cross linking groups may be incorporated into different polymer backbones, and subsequently reacted with an array of reagents. An adhesive composition comprising a copolymer, the copolymer comprising pendant dihydroxyphenyl groups; and a crosslinking agent selected from the group consisting of, for example, oxidants, enzymes, metals, and light. A method of preparing an adhesive composition comprising copolymerizing a first monomer comprising pendant dihydroxy-protected dihydroxyphenyl groups; deprotecting the dihydroxy-protected dihydroxyphenyl groups; crosslinking the dihydroxyphenyl groups with a crosslinking agent.

Abstract: A method of making a superconducting structure includes depositing a metal alkoxide on a surface of a metal and hydrolyzing the metal alkoxide on the surface to form a pinhole-free film. The metal is a superconductor. The metal alkoxide may be a compound of formula (I): M4(OPrn)16??(I); where M is zirconium or hafnium, and the purity of the compound is at least 97% as measured by NMR spectroscopy.

Abstract: A method of making a superconducting structure includes depositing a metal alkoxide on a surface of a metal and hydrolyzing the metal alkoxide on the surface to form a pinhole-free film. The metal is a superconductor.