Patents by Inventor Glenn Whitener
Glenn Whitener has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10418248Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt. % to about 5 wt. %, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.Type: GrantFiled: February 15, 2017Date of Patent: September 17, 2019Assignee: Cabot Microelectronics CorporationInventors: Benjamin Petro, Glenn Whitener, William Ward
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Publication number: 20190241783Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.Type: ApplicationFiled: April 19, 2019Publication date: August 8, 2019Inventors: Roman IVANOV, Fernando HUNG LOW, Cheng-Yuan KO, Glenn WHITENER
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Patent number: 10294399Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.Type: GrantFiled: January 5, 2017Date of Patent: May 21, 2019Assignee: Cabot Microelectronics CorporationInventors: Roman Ivanov, Fernando Hung Low, Cheng-Yuan Ko, Glenn Whitener
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Patent number: 10066126Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.Type: GrantFiled: January 6, 2016Date of Patent: September 4, 2018Assignee: Cabot Microelectronics CorporationInventors: Kevin P. Dockery, Helin Huang, Matthew Carnes, Glenn Whitener
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Publication number: 20180190506Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.Type: ApplicationFiled: January 5, 2017Publication date: July 5, 2018Inventors: Roman IVANOV, Fernando HUNG LOW, Cheng-Yuan KO, Glenn WHITENER
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Patent number: 9944828Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition.Type: GrantFiled: October 21, 2015Date of Patent: April 17, 2018Assignee: Cabot Microelectronics CorporationInventors: Elise Sikma, Witold Paw, Benjamin Petro, Jeffrey Cross, Glenn Whitener
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Publication number: 20170236718Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt. %to about 5 wt. %, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.Type: ApplicationFiled: February 15, 2017Publication date: August 17, 2017Inventors: Benjamin PETRO, Glenn WHITENER, William WARD
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Publication number: 20170190936Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.Type: ApplicationFiled: January 6, 2016Publication date: July 6, 2017Inventors: Kevin P. Dockery, Helin Huang, Matthew Carnes, Glenn Whitener
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Patent number: 9566686Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.Type: GrantFiled: December 10, 2015Date of Patent: February 14, 2017Assignee: Cabot Microelectronics CorporationInventors: Steven Grumbine, Jeffrey Dysard, Lin Fu, William Ward, Glenn Whitener
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Publication number: 20160108286Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition.Type: ApplicationFiled: October 21, 2015Publication date: April 21, 2016Inventors: Elise Sikma, Witold Paw, Benjamin Petro, Jeffrey Cross, Glenn Whitener
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Patent number: 9303188Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.Type: GrantFiled: March 11, 2014Date of Patent: April 5, 2016Assignee: Cabot Microelectronics CorporationInventors: Steven Grumbine, Jeffrey Dysard, Lin Fu, William Ward, Glenn Whitener
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Patent number: 9303190Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.Type: GrantFiled: March 24, 2014Date of Patent: April 5, 2016Assignee: Cabot Microelectronics CorporationInventors: William Ward, Glenn Whitener, Steven Grumbine, Jeffrey Dysard
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Patent number: 9303189Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.Type: GrantFiled: March 11, 2014Date of Patent: April 5, 2016Assignee: Cabot Microelectronics CorporationInventors: Steven Grumbine, Jeffrey Dysard, Lin Fu, William Ward, Glenn Whitener
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Publication number: 20160089763Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.Type: ApplicationFiled: December 10, 2015Publication date: March 31, 2016Inventors: Steven GRUMBINE, Jeffrey DYSARD, Lin FU, William WARD, Glenn WHITENER
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Publication number: 20160053381Abstract: A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.Type: ApplicationFiled: August 22, 2014Publication date: February 25, 2016Inventors: Chih-Pin TSAI, Ming-Chih Yeh, Glenn Whitener, Lung-Tai Lu
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Patent number: 9238753Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.Type: GrantFiled: March 13, 2013Date of Patent: January 19, 2016Assignee: Cabot Microelectronics CorporationInventors: Brian Reiss, Glenn Whitener
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Patent number: 9238754Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.Type: GrantFiled: March 11, 2014Date of Patent: January 19, 2016Assignee: Cabot Microelectronics CorporationInventors: Steven Grumbine, Jeffrey Dysard, Lin Fu, William Ward, Glenn Whitener
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Publication number: 20150267083Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.Type: ApplicationFiled: March 24, 2014Publication date: September 24, 2015Inventors: William WARD, Glenn WHITENER, Steven GRUMBINE, Jeffrey DYSARD
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Publication number: 20150259572Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.Type: ApplicationFiled: March 11, 2014Publication date: September 17, 2015Inventors: Steven GRUMBINE, Jeffrey DYSARD, Lin FU, William WARD, Glenn WHITENER
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Publication number: 20150259573Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.Type: ApplicationFiled: March 11, 2014Publication date: September 17, 2015Inventors: Steven GRUMBINE, Jeffrey DYSARD, Lin FU, William WARD, Glenn WHITENER