Abstract: A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9), which forms a second pn junction (10) which acts as a protective diode along with the p-doped area (4), is applied to the p-doped area (4) in the area of the protective-diode section (8), the first pn junction (5b) in the protective-diode section (8) having a larger area than the first pn junction (5a) in the light-emitting section (7). The protective-diode section (8) protects the light-emitting semiconductor component from voltage pulses due to electrostatic discharges (ESD).

Abstract: A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.

Abstract: A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.

Abstract: A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction (1) for emitting radiation and a second semiconductor layer construction (2) for receiving radiation, which are arranged in a manner spaced apart from one another on a common substrate (3) and have at least one first contact layer (4). The first semiconductor layer construction (1) has an electromagnetic-radiation-generating region (5) arranged between p-conducting semiconductor layers (6) and n-conducting semiconductor layers (7) of the first semiconductor layer construction (1). A second contact layer (8) is at least partially arranged on that surface of the first semiconductor layer construction (1) which is remote from the substrate (3) and that of the second semiconductor layer construction (2).

Abstract: A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9), which forms a second pn junction (10) which acts as a protective diode along with the p-doped area (4), is applied to the p-doped area (4) in the area of the protective-diode section (8), the first pn junction (5b) in the protective-diode section (8) having a larger area than the first pn junction (5a) in the light-emitting section (7). The protective-diode section (8) protects the light-emitting semiconductor component from voltage pulses due to electrostatic discharges (ESD).

Abstract: A semiconductor laser, contains at least one absorbing layer (8) in its laser resonator, said absorbing layer reducing the transmission TRes of the laser radiation (10) in the laser resonator for the purpose of decreasing the sensitivity of the semiconductor laser to disturbances created by radiation (9) fed back into the laser resonator. This reduces fluctuations in the output power due to fed-back radiation (9).

Abstract: A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between ?1 and ?2 where ?2>?1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below ?2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below ?1, and passes electromagnetic radiation at a wavelength above ?1.

Abstract: A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction (1) for emitting radiation and a second semiconductor layer construction (2) for receiving radiation, which are arranged in a manner spaced apart from one another on a common substrate (3) and have at least one first contact layer (4). The first semiconductor layer construction (1) has an electromagnetic-radiation-generating region (5) arranged between p-conducting semiconductor layers (6) and n-conducting semiconductor layers (7) of the first semiconductor layer construction (1). A second contact layer (8) is at least partially arranged on that surface of the first semiconductor layer construction (1) which is remote from the substrate (3) and that of the second semiconductor layer construction (2).

Abstract: A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between ?1 and ?2 where ?2>?1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below ?2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below ?1, and passes electromagnetic radiation at a wavelength above ?1.