Abstract: A method for the fabrication of a layer of amorphous iridium oxide (IrOx) in a ferroelectric capacitor is described. The amorphous iridium oxide layer may act as a top electrode of the ferroelectric capacitor, or may be deposited on a top electrode that is made from crystalline iridium oxide or some other conductive material. The amorphous iridium oxide layer protects the underlying ferroelectric dielectric layer from chemical and mechanical degradation. Specifically, the amorphous iridium oxide layer is thought to act as a barrier against hydrogen, that reacts with the ferroelectric material in the ferroelectric dielectric layer and degrades the performance of the ferroelectric capacitor.