Patents by Inventor Gloria Marie Lee

Gloria Marie Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process to pattern thick TiW metal layers using uniform and selective etching
    Patent number: 6855638
    Abstract: A method processes a thick TiW metal layer (12) on a dielectric layer (15), where the dielectric layer (15) has been deposited on a substrate (14), such as a silicon substrate. The method deposits the TiW metal layer (12) onto the dielectric layer (15), such as silicon dioxide or silicon nitride, and then deposits a photoresist (10) over the TiW metal layer (12). The method removes substantially all of the TiW metal layer (12) not in contact with the photoresist (10) with a uniform etch, such as not more than 80% to 90% of the deposited TiW metal layer. Then, the TiW metal layer (12) is selectively etched to the dielectric layer (15), to remove the TiW metal layer (12) faster than the dielectric layer (15), such as 2.7 times faster.
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: February 15, 2005
    Assignee: Union Semiconductor Technology Corporation
    Inventors: Hans Peter Mikelson, Michael Paul Fleischer, Gloria Marie Lee, Jason Christopherson
  • Process to pattern thick TiW metal layers using uniform and selective etching
    Publication number: 20040192062
    Abstract: A method processes a thick TiW metal layer (12) on a dielectric layer (15), where the dielectric layer (15) has been deposited on a substrate (14), such as a silicon substrate. The method deposits the TiW metal layer (12) onto the dielectric layer (15), such as silicon dioxide or silicon nitride, and then deposits a photoresist (10) over the TiW metal layer (12). The method removes substantially all of the TiW metal layer (12) not in contact with the photoresist (10) with a uniform etch, such as not more than 80% to 90% of the deposited TiW metal layer. Then, the TiW metal layer (12) is selectively etched to the dielectric layer (15), to remove the TiW metal layer (12) faster than the dielectric layer (15), such as 2.7 times faster.
    Type: Application
    Filed: March 24, 2003
    Publication date: September 30, 2004
    Inventors: Hans Peter Mikelson, Michael Paul Fleischer, Gloria Marie Lee, Jason Christopherson