Patents by Inventor Gloria W.Y. Fraczak

Gloria W.Y. Fraczak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STACKED ACCESS DEVICE AND RESISTIVE MEMORY
    Publication number: 20220181550
    Abstract: A semiconductor device including stacked access device and resistive memory includes a stack disposed on a base structure, the stack including an access device stack and a resistive random-access memory (ReRAM) device stack, sidewall spacers disposed along a portion of the stack, a dielectric layer disposed over the stack, the sidewall spacers and the base structure, and an interlevel dielectric disposed on the dielectric layer.
    Type: Application
    Filed: February 24, 2022
    Publication date: June 9, 2022
    Inventors: Hiroyuki Miyazoe, Gloria W.Y. Fraczak, Kumar R. Virwani, Takashi Ando
  • Stacked access device and resistive memory
    Patent number: 11289650
    Abstract: A semiconductor device including stacked access device and resistive memory includes a stack disposed on a base structure, the stack including an access device stack and a resistive random-access memory (ReRAM) device stack, sidewall spacers disposed along a portion of the stack, a dielectric layer disposed over the stack, the sidewall spacers and the base structure, and an interlevel dielectric disposed on the dielectric layer.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: March 29, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hiroyuki Miyazoe, Gloria W. Y. Fraczak, Kumar R. Virwani, Takashi Ando
  • Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium
    Patent number: 10808316
    Abstract: A method of forming a phase change material is provided in which the crystalline state resistance of the material can be controlled through controlling the flow ratio of NH3/Ar. The method may include providing a flow modulated chemical vapor deposition apparatus. The method may further include flowing gas precursors into the flow modulated chemical vapor deposition apparatus to provide the base material components of the phase change material. The method further includes flowing a co-reactant precursor and an inert gas into the flow modulated chemical vapor deposition, wherein adjusting ratio of the co-reactant precursor to the inert gas adjusts the crystalline state resistance of the phase change material.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: October 20, 2020
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, ULVAC, INC.
    Inventors: Fabio Carta, Takeshi Masuda, Gloria W. Y. Fraczak, Robert Bruce, Norma Edith Sosa, Matthew J. BrightSky
  • STACKED ACCESS DEVICE AND RESISTIVE MEMORY
    Publication number: 20200287135
    Abstract: A semiconductor device including stacked access device and resistive memory includes a stack disposed on a base structure, the stack including an access device stack and a resistive random-access memory (ReRAM) device stack, sidewall spacers disposed along a portion of the stack, a dielectric layer disposed over the stack, the sidewall spacers and the base structure, and an interlevel dielectric disposed on the dielectric layer.
    Type: Application
    Filed: March 4, 2019
    Publication date: September 10, 2020
    Inventors: Hiroyuki Miyazoe, Gloria W.Y. Fraczak, Kumar R. Virwani, Takashi Ando
  • COMPOSITION CONTROL OF CHEMICAL VAPOR DEPOSITION NITROGEN DOPED GERMANIUM ANTIMONY TELLURIUM
    Publication number: 20190345607
    Abstract: A method of forming a phase change material is provided in which the crystalline state resistance of the material can be controlled through controlling the flow ratio of NH3/Ar. The method may include providing a flow modulated chemical vapor deposition apparatus. The method may further include flowing gas precursors into the flow modulated chemical vapor deposition apparatus to provide the base material components of the phase change material. The method further includes flowing a co-reactant precursor and an inert gas into the flow modulated chemical vapor deposition, wherein adjusting ratio of the co-reactant precursor to the inert gas adjusts the crystalline state resistance of the phase change material.
    Type: Application
    Filed: May 10, 2018
    Publication date: November 14, 2019
    Inventors: Fabio Carta, Takeshi Masuda, Gloria W.Y. Fraczak, Robert Bruce, Norma Edith Sosa, Matthew J. BrightSky