Abstract: The present invention provides a method and apparatus for providing an integrated electrochemical and solar cell. In one embodiment of the invention, an electrochemical cell with a self supporting ceramic cathode layer is electrically connected to a solar cell. In another embodiment of the invention, an electrochemical cell with a self supporting anode is provided. The present invention also contemplates methods of manufacturing the integrated electrochemical and solar cell wherein such methods provide weight savings and streamlined manufacturing procedures through the use of self supporting cathodes and anodes.

Abstract: The present invention provides an improved electrostatic chuck for a substrate processing system. The electrostatic chuck comprising a main body having a top surface configured to support the substrate, a power supply to apply a voltage to the main body and a sealing ring disposed between the main body and the substrate wherein the sealing ring has a conductive layer.

Abstract: The present invention provides an improved electrostatic chuck for a substrate processing system. The electrostatic chuck comprising a main body having a top surface configured to support the substrate, a power supply to apply a voltage to the main body and a sealing ring disposed between the main body and the substrate wherein the sealing ring has a conductive layer.

Abstract: The present invention provides a method and apparatus for providing an integrated electrochemical and solar cell. In one embodiment of the invention, an electrochemical cell with a self supporting ceramic cathode layer is electrically connected to a solar cell. In another embodiment of the invention, an electrochemical cell with a self supporting anode is provided. The present invention also contemplates methods of manufacturing the integrated electrochemical and solar cell wherein such methods provide weight savings and streamlined manufacturing procedures through the use of self supporting cathodes and anodes.

Abstract: One or more chambers of a multi-chamber vacuum processing apparatus are provided with a high gas flow conductance path to an exhaust volume of the apparatus that is maintained at high vacuum with a high vacuum pump. Separate pumps for the one or more chambers are made unnecessary by providing such chambers with a protective deposition shield or shield set that is configured to substantially protect walls of the chamber and the gas flow conductance path from deposition and to partially impede the gas flow from the chamber through the gas flow conductance path to the exhaust volume so that the chamber can be operated at a higher pressure than that of the exhaust volume and the chambers can be operated at different pressures and without cross-contamination. Preferably, a nested set of chamber shields is used. A controller is programmed to control the processing of wafers in the chambers by controlling the supply of process gas into the chambers.

Abstract: One or more chambers of a multi-chamber vacuum processing apparatus are provided with a high gas flow conductance path to an exhaust volume of the apparatus that is maintained at high vacuum with a high vacuum pump. Separate pumps for the one or more chambers are made unnecessary by providing such chambers with a protective deposition shield or shield set that is configured to substantially protect walls of the chamber and the gas flow conductance path from deposition and to partially impede the gas flow from the chamber through the gas flow conductance path to the exhaust volume so that the chamber can be operated at a higher pressure than that of the exhaust volume and the chambers can be operated at different pressures and without cross-contamination. Preferably, a nested set of chamber shields is used. A controller is programmed to control the processing of wafers in the chambers by controlling the supply of process gas into the chambers.

Abstract: An apparatus for processing a substrate in a processing system having multiple process chambers and a common transfer chamber comprises a process chamber having a process space to receive and process a substrate and a buffer chamber defining a buffer space. The buffer chamber is positioned beneath the process chamber and is configured for interfacing with a transfer chamber of a processing system for receiving a substrate to be processed. A passage is formed between the process and buffer chambers for moving a substrate between the process space and buffer space and a movable substrate stage in the buffer space is operable for moving vertically in said passage between a first position wherein the substrate is positioned in the buffer space and a second position wherein the substrate is positioned within the process space of the process chamber.