Abstract: A surface emitting laser according to one embodiment of the present disclosure includes: a substrate having a convex part provided on a surface thereof; and a vertical resonator structure formed on the substrate, and including an active layer, a first semiconductor layer, and a current blocking layer. The first semiconductor layer is a semiconductor layer of a first conductivity type having a step structure part having a shape conforming to the convex part at a location facing the convex part. The current blocking layer is a semiconductor layer of a second conductivity type different from the first conductivity type and having an opening in which an inner peripheral surface is in contact with an outer peripheral surface of the step structure part.

Abstract: Provided is a laser device capable of realizing the increased output and increased repeatability even when the surface roughness of the gain medium is large.

Abstract: To provide a laser processing machine, a processing method, and a laser light source that are capable of miniaturization. The laser processing machine includes a laser light source and an optical system. The laser light source includes a light emitting body including a substrate and a bottom emission type vertical-cavity surface-emitting laser element that is provided on one surface of the substrate and emits an excitation light beam from another surface side of the substrate, and a cavity that is disposed in contact with the light emitting body on the other surface side of the substrate and oscillates a pulsed laser beam by incidence of the excitation light beam. The optical system causes the pulsed laser beam to contract and applies the pulsed laser beam to a workpiece.

Abstract: Disclosed herein is a method for evaluation of an oxide semiconductor electrode, the method comprising: performing Raman spectrometry on a porous oxide semiconductor layer having a dye adsorbed thereto, thereby acquiring a Raman spectrum having a peak attributable to the dye and a peak attributable to the oxide semiconductor; obtaining from the Raman spectrum a parameter for dye adsorption quantity which is defined by the formula: Parameter for dye adsorption quantity=(Peak intensity attributable to dye)/(Peak intensity attributable to oxide semiconductor); and estimating the amount of the dye adsorbed to the porous oxide semiconductor layer on the basis of the thus obtained parameter for dye adsorption quantity.

Abstract: Disclosed herein is a method for evaluation of an oxide semiconductor electrode, the method comprising: performing Raman spectrometry on a porous oxide semiconductor layer having a dye adsorbed thereto, thereby acquiring a Raman spectrum having a peak attributable to the dye and a peak attributable to the oxide semiconductor; obtaining from the Raman spectrum a parameter for dye adsorption quantity which is defined by the formula: Parameter for dye adsorption quantity=(Peak intensity attributable to dye)/(Peak intensity attributable to oxide semiconductor); and estimating the amount of the dye adsorbed to the porous oxide semiconductor layer on the basis of the thus obtained parameter for dye adsorption quantity.