Patents by Inventor Go MATSUURA

Go MATSUURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240286980
    Abstract: Provided is a production method that enables simple and efficient production of a fluorinated hydrocarbon by a gas phase flow method without using a catalyst. The method of producing a fluorinated hydrocarbon includes continuously supplying a gaseous fluorine-containing inorganic compound to an electrical discharge zone in a plasma apparatus and subsequently causing migration to outside of the electrical discharge zone in the plasma apparatus, continuously supplying a feedstock gas containing an inert gas and a compound represented by formula 1: CH3—R (R is a hydrogen atom, a chlorine atom, a bromine atom, an iodine atom, or an organic group other than a hydrocarbon group) to outside of the electrical discharge zone in the plasma apparatus, and subsequently continuously releasing, to outside of the plasma apparatus, gas that is contained outside of the electrical discharge zone in the plasma apparatus.
    Type: Application
    Filed: May 19, 2022
    Publication date: August 29, 2024
    Applicants: ZEON CORPORATION, KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
    Inventors: Go MATSUURA, Keita INADA, Takayuki WATANABE, Manabu TANAKA, Kazuki MATSUI
  • Publication number: 20230159415
    Abstract: Provided is a production method that enables production of monofluoromethane by a gas phase flow method without using a catalyst. The method of producing monofluoromethane includes causing electrical discharge of a feedstock gas containing a fluorine-containing inorganic compound, a compound represented by formula 1: CH3—R (R is a hydrogen atom, a chlorine atom, a bromine atom, an iodine atom, or an organic group other than a hydrocarbon group), and an inert gas, while in a continuous flow state, and then causing continuous release to outside of an electrical discharge zone.
    Type: Application
    Filed: May 19, 2021
    Publication date: May 25, 2023
    Applicant: ZEON CORPORATION
    Inventor: Go MATSUURA
  • Publication number: 20220341044
    Abstract: Provided is a production method that enables production of carbonyl sulfide by a gas phase flow method without using a catalyst. The method of producing carbonyl sulfide includes causing electrical discharge of a feedstock gas containing starting substances that include CS2 and one or more selected from the group consisting of CO2, CO, O2, and O3 while in a continuous flow state and then causing release to outside of an electrical discharge zone.
    Type: Application
    Filed: June 22, 2020
    Publication date: October 27, 2022
    Applicant: ZEON CORPORATION
    Inventor: Go MATSUURA
  • Patent number: 10629447
    Abstract: A plasma etching method includes: a deposition step of providing an atmosphere containing a first processing gas including at least one gas including either or both of a fluorine atom and a carbon atom and a second processing gas having a noble gas as a main component inside a processing vessel, and forming a thin film; and an etching step of providing an atmosphere containing at least the second processing gas inside the processing vessel and plasma etching a processing subject substrate. The deposition step and the etching step are switched between and implemented alternately. When an atmosphere containing the first processing gas and the second processing gas is provided inside the processing vessel in the deposition step, the atmosphere is configured to contain at least 2.4 times and not more than 3.1 times more fluorine atoms than carbon atoms by mass.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: April 21, 2020
    Assignee: ZEON CORPORATION
    Inventor: Go Matsuura
  • Patent number: 10424489
    Abstract: A plasma etching method uses, as a processing gas, a mixed gas of at least one fluorocarbon gas and at least one hydrofluoroether gas represented by chemical formula (I).
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: September 24, 2019
    Assignee: ZEON CORPORATION
    Inventor: Go Matsuura
  • Publication number: 20190096689
    Abstract: A plasma etching method includes: a deposition step of providing an atmosphere containing a first processing gas including at least one gas including either or both of a fluorine atom and a carbon atom and a second processing gas having a noble gas as a main component inside a processing vessel, and forming a thin film; and an etching step of providing an atmosphere containing at least the second processing gas inside the processing vessel and plasma etching a processing subject substrate. The deposition step and the etching step are switched between and implemented alternately. When an atmosphere containing the first processing gas and the second processing gas is provided inside the processing vessel in the deposition step, the atmosphere is configured to contain at least 2.4 times and not more than 3.1 times more fluorine atoms than carbon atoms by mass.
    Type: Application
    Filed: March 8, 2017
    Publication date: March 28, 2019
    Applicant: ZEON CORPORATION
    Inventor: Go MATSUURA
  • Publication number: 20190027368
    Abstract: A plasma etching method uses, as a processing gas, a mixed gas of at least one fluorocarbon gas and at least one hydrofluoroether gas represented by chemical formula (I).
    Type: Application
    Filed: March 8, 2017
    Publication date: January 24, 2019
    Applicant: ZEON CORPORATION
    Inventor: Go MATSUURA