Abstract: Provided is a production method that enables production of monofluoromethane by a gas phase flow method without using a catalyst. The method of producing monofluoromethane includes causing electrical discharge of a feedstock gas containing a fluorine-containing inorganic compound, a compound represented by formula 1: CH3—R (R is a hydrogen atom, a chlorine atom, a bromine atom, an iodine atom, or an organic group other than a hydrocarbon group), and an inert gas, while in a continuous flow state, and then causing continuous release to outside of an electrical discharge zone.

Abstract: Provided is a production method that enables production of carbonyl sulfide by a gas phase flow method without using a catalyst. The method of producing carbonyl sulfide includes causing electrical discharge of a feedstock gas containing starting substances that include CS2 and one or more selected from the group consisting of CO2, CO, O2, and O3 while in a continuous flow state and then causing release to outside of an electrical discharge zone.

Abstract: A plasma etching method includes: a deposition step of providing an atmosphere containing a first processing gas including at least one gas including either or both of a fluorine atom and a carbon atom and a second processing gas having a noble gas as a main component inside a processing vessel, and forming a thin film; and an etching step of providing an atmosphere containing at least the second processing gas inside the processing vessel and plasma etching a processing subject substrate. The deposition step and the etching step are switched between and implemented alternately. When an atmosphere containing the first processing gas and the second processing gas is provided inside the processing vessel in the deposition step, the atmosphere is configured to contain at least 2.4 times and not more than 3.1 times more fluorine atoms than carbon atoms by mass.

Abstract: A plasma etching method uses, as a processing gas, a mixed gas of at least one fluorocarbon gas and at least one hydrofluoroether gas represented by chemical formula (I).

Abstract: A plasma etching method includes: a deposition step of providing an atmosphere containing a first processing gas including at least one gas including either or both of a fluorine atom and a carbon atom and a second processing gas having a noble gas as a main component inside a processing vessel, and forming a thin film; and an etching step of providing an atmosphere containing at least the second processing gas inside the processing vessel and plasma etching a processing subject substrate. The deposition step and the etching step are switched between and implemented alternately. When an atmosphere containing the first processing gas and the second processing gas is provided inside the processing vessel in the deposition step, the atmosphere is configured to contain at least 2.4 times and not more than 3.1 times more fluorine atoms than carbon atoms by mass.

Abstract: A plasma etching method uses, as a processing gas, a mixed gas of at least one fluorocarbon gas and at least one hydrofluoroether gas represented by chemical formula (I).