Patents by Inventor Go Miya
Go Miya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11735394Abstract: Provided is a charged particle beam apparatus capable of analyzing foreign matters generated when a sample is transported or observed. The charged particle beam apparatus includes a sample stage on which a measurement sample is provided, a charged particle beam source that irradiates the measurement sample with a charged particle beam, and a detector that detects charged particles emitted by irradiation with the charged particle beam, and includes a foreign matter observation sample held on the sample stage together with the measurement sample and a foreign matter observation unit that causes a foreign matter to be observed on the foreign matter observation sample.Type: GrantFiled: November 30, 2018Date of Patent: August 22, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Takafumi Miwa, Seiichiro Kanno, Go Miya
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Publication number: 20230005700Abstract: Provided is a charged particle beam device capable of reducing scattering of a foreign substance collected by a foreign substance collecting unit. The charged particle beam device includes: a sample chamber in which a sample is to be disposed; and a charged particle beam source configured to irradiate the sample with a charged particle beam. The charged particle beam device further includes: a foreign substance attachment/detachment unit from or to which a foreign substance is to detach or attach; and a foreign substance collecting unit provided in the sample chamber and configured to collect a foreign substance dropped from the foreign substance attachment/detachment unit. An opening through which the foreign substance passes is provided in an upper end portion of the foreign substance collecting unit. An area of the opening is smaller than a horizontal cross-sectional area of an internal space of the foreign substance collecting unit.Type: ApplicationFiled: December 23, 2019Publication date: January 5, 2023Inventors: Takafumi MIWA, Go MIYA, Kazuma TANII, Seiichiro KANNO
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Publication number: 20220028650Abstract: Provided is a charged particle beam apparatus capable of analyzing foreign matters generated when a sample is transported or observed. The charged particle beam apparatus includes a sample stage on which a measurement sample is provided, a charged particle beam source that irradiates the measurement sample with a charged particle beam, and a detector that detects charged particles emitted by irradiation with the charged particle beam, and includes a foreign matter observation sample held on the sample stage together with the measurement sample and a foreign matter observation unit that causes a foreign matter to be observed on the foreign matter observation sample.Type: ApplicationFiled: November 30, 2018Publication date: January 27, 2022Applicants: Hitachi High-Tech Corporation, Hitachi High-Tech CorporationInventors: Takafumi Miwa, Seiichiro Kanno, Go Miya
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Patent number: 10872742Abstract: A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.Type: GrantFiled: November 24, 2016Date of Patent: December 22, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Takafumi Miwa, Seiichiro Kanno, Go Miya
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Publication number: 20200006032Abstract: A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.Type: ApplicationFiled: November 24, 2016Publication date: January 2, 2020Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Takafumi MIWA, Seiichiro KANNO, Go MIYA
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Patent number: 10128141Abstract: A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve.Type: GrantFiled: February 19, 2014Date of Patent: November 13, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Takumi Tandou, Go Miya, Masaru Izawa, Hiromichi Kawasaki
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Patent number: 9799486Abstract: In a charged particle beam apparatus that applies a retarding voltage to a sample through a contact terminal and executes measurement or inspection of a surface of the sample, potential variation of the sample when changing the retarding voltage applied to the contact terminal is measured by a surface potential meter, a time constant of the potential variation of the sample is obtained, and it is determined whether execution of measurement or inspection by a charged particle beam continues or stops based on the time constant, or a conduction ensuring process between the sample and the contact terminal is executed.Type: GrantFiled: July 10, 2015Date of Patent: October 24, 2017Assignee: Hitachi High-Technologies CorporationInventors: Seiichiro Kanno, Yasushi Ebizuka, Go Miya, Takafumi Miwa
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Patent number: 9704731Abstract: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.Type: GrantFiled: October 15, 2014Date of Patent: July 11, 2017Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Go Miya, Masaru Izawa, Takumi Tandou
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Patent number: 9401297Abstract: Proposed are an electrostatic chuck mechanism and a charged particle beam apparatus including a first plane that is a plane of a side in which a sample is adsorbed, a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied, and a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein the first plane is formed so that a size in a plane direction of the first plane is smaller than that of the sample.Type: GrantFiled: February 19, 2015Date of Patent: July 26, 2016Assignee: Hitachi High-Technologies CorporationInventors: Yasushi Ebizuka, Seiichiro Kanno, Masaya Yasukochi, Masakazu Takahashi, Naoya Ishigaki, Go Miya
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Publication number: 20160013010Abstract: In a charged particle beam apparatus that applies a retarding voltage to a sample through a contact terminal and executes measurement or inspection of a surface of the sample, potential variation of the sample when changing the retarding voltage applied to the contact terminal is measured by a surface potential meter, a time constant of the potential variation of the sample is obtained, and it is determined whether execution of measurement or inspection by a charged particle beam continues or stops based on the time constant, or a conduction ensuring process between the sample and the contact terminal is executed.Type: ApplicationFiled: July 10, 2015Publication date: January 14, 2016Inventors: Seiichiro KANNO, Yasushi EBIZUKA, Go MIYA, Takafumi MIWA
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Publication number: 20150262857Abstract: Proposed are an electrostatic chuck mechanism and a charged particle beam apparatus including a first plane that is a plane of a side in which a sample is adsorbed, a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied, and a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein the first plane is formed so that a size in a plane direction of the first plane is smaller than that of the sample.Type: ApplicationFiled: February 19, 2015Publication date: September 17, 2015Inventors: Yasushi EBIZUKA, Seiichiro KANNO, Masaya YASUKOCHI, Masakazu TAKAHASHI, Naoya ISHIGAKI, Go MIYA
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Publication number: 20150031213Abstract: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.Type: ApplicationFiled: October 15, 2014Publication date: January 29, 2015Inventors: Go MIYA, Masaru IZAWA, Takumi TANDOU
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Patent number: 8921781Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.Type: GrantFiled: August 20, 2013Date of Patent: December 30, 2014Assignee: Hitachi High-Technologies CorporationInventors: Go Miya, Seiichiro Kanno, Hiroyuki Kitsunai, Masaru Matsushima, Toru Shuto
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Publication number: 20140283534Abstract: A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve.Type: ApplicationFiled: February 19, 2014Publication date: September 25, 2014Inventors: Takumi Tandou, Go Miya, Masaru Izawa, Hiromichi Kawasaki
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Patent number: 8653455Abstract: The charged particle beam device has a problem that a symmetry of equipotential distribution is disturbed near the outer edge of a specimen, an object being evaluated, causing a charged particle beam to deflect there. An electrode plate installed inside the specimen holding mechanism of electrostatic attraction type is formed of an inner and outer electrode plates arranged concentrically. The outer electrode plate is formed to have an outer diameter larger than that of the specimen. The dimensions of the electrode plates are determined so that an overlapping area of the outer electrode plate and the specimen is substantially equal to an area of the inner electrode plate. The inner electrode plate is impressed with a voltage of a positive polarity with respect to a reference voltage and of an arbitrary magnitude, and the outer electrode is impressed with a voltage of a negative polarity and of an arbitrary magnitude.Type: GrantFiled: June 3, 2010Date of Patent: February 18, 2014Assignee: Hitachi High-Technologies CorporationInventors: Hiroyuki Kitsunai, Seiichiro Kanno, Masaru Matsushima, Shuichi Nakagawa, Go Miya
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Publication number: 20140004706Abstract: Provided is a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. Openings of the upstream-side expansion valves and openings of the downstream-side expansion valves are adjusted so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.Type: ApplicationFiled: June 27, 2013Publication date: January 2, 2014Inventors: Go MIYA, Masaru IZAWA, Takumi TANDOU
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Publication number: 20130327939Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.Type: ApplicationFiled: August 20, 2013Publication date: December 12, 2013Applicant: HITACHI HIGH-TECHNOLOGIESInventors: Go MIYA, Seiichiro KANNO, Hiroyuki KITSUNAI, Masaru MATSUSHIMA, Toru SHUTO
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Patent number: 8519332Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.Type: GrantFiled: June 29, 2012Date of Patent: August 27, 2013Assignee: Hitachi High-Technologies CorporationInventors: Go Miya, Seiichiro Kanno, Hiroyuki Kitsunai, Masaru Matsushima, Toru Shuto
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Publication number: 20120273136Abstract: A plasma processing apparatus includes a processing chamber, a sample stage, a radio-frequency power supply which enables generation of plasma in the processing chamber, and at least one induction coil. The induction coil is formed by connecting a plurality of identical coil elements so that a same radio-frequency voltage is applied to each of the plurality of identical coil elements, and each input terminals of the identical coil elements is displaced at intervals of an angle calculated by dividing 360° by the number of identical coil elements. Continuous conductor portions of the identical coil elements are formed on different adjacent surfaces of the annular ring and constituted so as to be displaced from one another for a predetermined angle at a time so as to extend along a circumferential direction of the different adjacent surfaces of the annular ring.Type: ApplicationFiled: July 10, 2012Publication date: November 1, 2012Inventors: Manabu Edamura, Go Miya, Ken Yoshioka
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Publication number: 20120261589Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.Type: ApplicationFiled: June 29, 2012Publication date: October 18, 2012Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Go MIYA, Seiichiro KANNO, Hiroyuki KITSUNAI, Masaru MATSUSHIMA, Toru SHUTO