Abstract: A wafer transfer hand includes a hand main body, an electrostatic chuck, and an easily-deformable member, the electrostatic chuck and the easily-deformable member are disposed adjacent to each other on one plane of the hand main body, and the easily-deformable member has a height higher than that of the electrostatic chuck. Accordingly, in the wafer transfer hand, even when an electrostatic adsorption force is reduced, a positional displacement of the wafer can be prevented, and a wafer can be prevented from bouncing due to a residual adsorption force.

Abstract: To provide a technique of the above charged particle beam apparatus, a technique that can prevent the lowering of apparatus performance due to the influence of vibration and noise by an air blower (fan). The charged particle beam apparatus includes a body device that is provided in a body cover, a plurality of air blowers that are provided on the body cover, and a controller that controls the plurality of air blowers. The body device has a stage on which a sample is placed, and a microscope that images the sample. The controller obtains an image obtained by imaging the sample by the microscope, obtains vibration information from the image, compares the vibration information and a specification value, and on the basis of the result of the comparison, controls the numbers of rotations of the plurality of air blowers.

Abstract: Provided is a charged particle beam device capable of correcting an aberration that occurs when an outer peripheral portion of a sample is observed. The charged particle beam device includes: a sample stage configured to hold a sample; a charged particle beam source configured to emit a charged particle beam to be emitted onto the sample; a lens configured to focus the charged particle beam on the sample; an aberration corrector configured to correct an aberration of the charged particle beam; a deflector configured to perform scanning with the charged particle beam; a detector configured to detect a charged particle emitted from the sample by being scanned with the charged particle beam; and a control unit configured to generate an observation image of the sample based on a detection signal output from the detector and control an operation of each of the parts.

Abstract: The present invention reduces the foreign matter that has stuck to the inner wall of a vacuum sample chamber 5 or a load lock chamber 4. A vacuum processing device 5 comprises a conveyance robot 3, the vacuum sample chamber 5, the load lock chamber 4, a neutralization device 23 for neutralizing the foreign matter having stuck to the inner wall of the load lock chamber 4 and/or the vacuum sample chamber 5, a valve 22 for dry nitrogen introduction to supply nitrogen to the load lock chamber 4 and the vacuum sample chamber 5, pumps 15 and 17 for exhausting the load lock chamber 4 and the vacuum sample chamber 5, and a control device 10.

Abstract: Provided is a charged particle beam device capable of reducing scattering of a foreign substance collected by a foreign substance collecting unit. The charged particle beam device includes: a sample chamber in which a sample is to be disposed; and a charged particle beam source configured to irradiate the sample with a charged particle beam. The charged particle beam device further includes: a foreign substance attachment/detachment unit from or to which a foreign substance is to detach or attach; and a foreign substance collecting unit provided in the sample chamber and configured to collect a foreign substance dropped from the foreign substance attachment/detachment unit. An opening through which the foreign substance passes is provided in an upper end portion of the foreign substance collecting unit. An area of the opening is smaller than a horizontal cross-sectional area of an internal space of the foreign substance collecting unit.

Abstract: To provide a technique of the above charged particle beam apparatus, a technique that can prevent the lowering of apparatus performance due to the influence of vibration and noise by an air blower (fan). The charged particle beam apparatus includes a body device that is provided in a body cover, a plurality of air blowers that are provided on the body cover, and a controller that controls the plurality of air blowers. The body device has a stage on which a sample is placed, and a microscope that images the sample. The controller obtains an image obtained by imaging the sample by the microscope, obtains vibration information from the image, compares the vibration information and a specification value, and on the basis of the result of the comparison, controls the numbers of rotations of the plurality of air blowers.

Abstract: Provided is a charged particle beam apparatus capable of analyzing foreign matters generated when a sample is transported or observed. The charged particle beam apparatus includes a sample stage on which a measurement sample is provided, a charged particle beam source that irradiates the measurement sample with a charged particle beam, and a detector that detects charged particles emitted by irradiation with the charged particle beam, and includes a foreign matter observation sample held on the sample stage together with the measurement sample and a foreign matter observation unit that causes a foreign matter to be observed on the foreign matter observation sample.

Abstract: Provided is a charged particle beam device capable of reducing scattering of a foreign substance collected by a foreign substance collecting unit. The charged particle beam device includes: a sample chamber in which a sample is to be disposed; and a charged particle beam source configured to irradiate the sample with a charged particle beam. The charged particle beam device further includes: a foreign substance attachment/detachment unit from or to which a foreign substance is to detach or attach; and a foreign substance collecting unit provided in the sample chamber and configured to collect a foreign substance dropped from the foreign substance attachment/detachment unit. An opening through which the foreign substance passes is provided in an upper end portion of the foreign substance collecting unit. An area of the opening is smaller than a horizontal cross-sectional area of an internal space of the foreign substance collecting unit.

Abstract: Provided is a charged particle beam apparatus capable of analyzing foreign matters generated when a sample is transported or observed. The charged particle beam apparatus includes a sample stage on which a measurement sample is provided, a charged particle beam source that irradiates the measurement sample with a charged particle beam, and a detector that detects charged particles emitted by irradiation with the charged particle beam, and includes a foreign matter observation sample held on the sample stage together with the measurement sample and a foreign matter observation unit that causes a foreign matter to be observed on the foreign matter observation sample.

Abstract: A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.

Abstract: A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.

Abstract: A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve.

Abstract: In a charged particle beam apparatus that applies a retarding voltage to a sample through a contact terminal and executes measurement or inspection of a surface of the sample, potential variation of the sample when changing the retarding voltage applied to the contact terminal is measured by a surface potential meter, a time constant of the potential variation of the sample is obtained, and it is determined whether execution of measurement or inspection by a charged particle beam continues or stops based on the time constant, or a conduction ensuring process between the sample and the contact terminal is executed.

Abstract: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.

Abstract: Proposed are an electrostatic chuck mechanism and a charged particle beam apparatus including a first plane that is a plane of a side in which a sample is adsorbed, a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied, and a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein the first plane is formed so that a size in a plane direction of the first plane is smaller than that of the sample.

Abstract: In a charged particle beam apparatus that applies a retarding voltage to a sample through a contact terminal and executes measurement or inspection of a surface of the sample, potential variation of the sample when changing the retarding voltage applied to the contact terminal is measured by a surface potential meter, a time constant of the potential variation of the sample is obtained, and it is determined whether execution of measurement or inspection by a charged particle beam continues or stops based on the time constant, or a conduction ensuring process between the sample and the contact terminal is executed.

Abstract: Proposed are an electrostatic chuck mechanism and a charged particle beam apparatus including a first plane that is a plane of a side in which a sample is adsorbed, a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied, and a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein the first plane is formed so that a size in a plane direction of the first plane is smaller than that of the sample.

Abstract: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.

Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

Abstract: A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve.