Abstract: The present invention provides a semiconductor device relaxing the electric field concentration in a gate insulating film just below a gate electrode, and a production method therefor. The semiconductor device has a third semiconductor layer, a gate insulating film, a gate electrode, and a passivation film. The gate insulating film has a gate electrode contact region being in contact with the gate electrode, and a gate electrode non-contact region not being in contact with the gate electrode. The passivation film has a dielectric constant higher than the dielectric constant of the gate insulating film. A thickness of the gate electrode contact region and a thickness of the gate electrode non-contact region satisfy the following equation 0.8?t2/t1<1.

Abstract: The present invention provides a semiconductor device relaxing the electric field concentration in a gate insulating film just below a gate electrode, and a production method therefor. The semiconductor device has a third semiconductor layer, a gate insulating film, a gate electrode, and a passivation film. The gate insulating film has a gate electrode contact region being in contact with the gate electrode, and a gate electrode non-contact region not being in contact with the gate electrode. The passivation film has a dielectric constant higher than the dielectric constant of the gate insulating film. A thickness of the gate electrode contact region and a thickness of the gate electrode non-contact region satisfy the following equation 0.8?t2/t1<1.