Patents by Inventor Go Ohara

Go Ohara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100089371
    Abstract: A forced air induction system for an internal combustion engine (1) has: a forced air induction device; an EGR valve (10) provided in an EGR passage (9) connecting an intake air passage (14) and an exhaust gas passage (6); and a diagnosis device (20) adapted to execute an abnormality diagnosis for the forced air induction device based on a deviation of the actual boost pressure at the forced air induction device from a target boost pressure. The diagnosis device inhibits execution of the abnormality diagnosis when the operation state of the EGR valve is out of a normal operation range specifically determined.
    Type: Application
    Filed: March 25, 2008
    Publication date: April 15, 2010
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Daisuke Shibata, Hiroshi Sawada, Go Ohara
  • Patent number: 7347958
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k?m or less.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: March 25, 2008
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
  • Publication number: 20070215456
    Abstract: The present invention relates to the oxide sintered body substantially containing zinc, tin and oxygen, useful as a target, which can be sputtered under charging of high DC power, without generation of arcing or crack, and a manufacturing method for an oxide transparent conductive film formable in high-speed, and the oxide transparent conductive film excellent in chemical resistance. The oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.
    Type: Application
    Filed: March 12, 2007
    Publication date: September 20, 2007
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Yoshiyuki Abe, Tokuyuki Nakayama, Go Ohara, Riichiro Wake
  • Publication number: 20070057239
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k?m or less.
    Type: Application
    Filed: November 14, 2006
    Publication date: March 15, 2007
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
  • Patent number: 7153453
    Abstract: There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 ?m so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 ?m; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C.
    Type: Grant
    Filed: April 27, 2005
    Date of Patent: December 26, 2006
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Tokuyuki Nakayama, Go Ohara, Riichiro Wake
  • Patent number: 7141186
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k.cm or less.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: November 28, 2006
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
  • Publication number: 20050239660
    Abstract: There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 ?m so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 ?m; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C.
    Type: Application
    Filed: April 27, 2005
    Publication date: October 27, 2005
    Inventors: Yoshiyuki Abe, Tokuyuki Nakayama, Go Ohara, Riichiro Wake
  • Publication number: 20040164281
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k.cm or less.
    Type: Application
    Filed: October 28, 2003
    Publication date: August 26, 2004
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara