Abstract: A quantum information processing device includes a control unit controlling a quantum bit array, and a common control gate line capable of controlling a plurality of quantum bits, the common control gate line is commonly connected to each of the plurality of transistors, and the control unit performs control such that the number of quantum bits operated in the quantum bit array is less than or equal to half the total number of transistors.

Abstract: A quantum bit array comprises a semiconductor layer, an insulating layer arranged on the semiconductor layer, and a plurality of first gate electrodes which are arranged on the insulating layer. The plurality of first gate electrodes are each configured to trap an electron having a predetermined spin state in the semiconductor layer through application of a voltage. The quantum bit array comprises means for causing, in a case where the spin state of the electron is to be changed, a current for forming a magnetic field that acts on the electron to flow through at least one of the plurality of first gate electrodes in an extending direction of the at least one of the plurality of first gate electrodes.

Abstract: A semiconductor device according to this invention includes a first power line that supplies power to a first circuit, a second power line that supplies power to a second circuit, and a capacitive element that is provided between the first power line and the second power line.

Abstract: A semiconductor device according to this invention includes a first power line that supplies power to a first circuit, a second power line that supplies power to a second circuit, and a capacitive element that is provided between the first power line and the second power line.