Patents by Inventor Goun Kim

Goun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180148696
    Abstract: Provided are a recombinant microorganism including a genetic modification that increases activity of a cellulose synthase, a gene that encodes the cellulose synthase having increased activity, and a method of producing cellulose by using the recombinant microorganism.
    Type: Application
    Filed: November 29, 2017
    Publication date: May 31, 2018
    Inventors: Jinsuk Lee, Kijun Jeong, Jaehyung Lee, Jiae Yun, Jinkyu Kang, Goun Kim, Jinhwan Park
  • Patent number: 8486880
    Abstract: Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: July 16, 2013
    Assignees: Samsung Electronics Co., Ltd., Cheil Industries Inc.
    Inventors: Dong-Min Kang, Dongchan Bae, Kyoochul Cho, Baiksoon Choi, Seunghyun Ahn, Myungkook Park, Goun Kim
  • Publication number: 20120058636
    Abstract: Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.
    Type: Application
    Filed: November 14, 2011
    Publication date: March 8, 2012
    Inventors: Dong-Min KANG, Dongchan Bae, Kyoochul Cho, Baiksoon Choi, Seunghyun Ahn, Myungkook Park, Goun Kim
  • Patent number: 8058221
    Abstract: Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: November 15, 2011
    Assignees: Samsung Electronics Co., Ltd., Cheil Industries Inc.
    Inventors: Dong-Min Kang, Dongchan Bae, Kyoochul Cho, Baiksoon Choi, Seunghyun Ahn, Myungkook Park, Goun Kim
  • Publication number: 20110245128
    Abstract: Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.
    Type: Application
    Filed: April 6, 2011
    Publication date: October 6, 2011
    Applicants: Samsung Electronics Co., Ltd., Cheil Industries Inc.
    Inventors: Dong-Min KANG, Dongchan Bae, Kyoochul Cho, Baiksoon Choi, Seunghyun Ahn, Myungkook Park, Goun Kim
  • Patent number: 7269965
    Abstract: The present invention discloses a built-in type outdoor unit for an air conditioner to provide an efficient installation structure for installing the outdoor unit increased in capacity due to high air conditioning capacity in a built-in type.
    Type: Grant
    Filed: April 18, 2003
    Date of Patent: September 18, 2007
    Assignee: LG Electronics Inc.
    Inventors: In-Gyu Kim, Young-Ju Bae, Jae-Hyung Koo, Byung-Il Park, Kycong-Ho Kim, Yang-Ho Kim, Young-Ho Hong, Kyeong-Wook Heo, Kang-Wook Cha, Si-Kyong Sung, Dong-Hyuk Lee, Seong-Min Kang, Tac-Goun Kim
  • Publication number: 20040237559
    Abstract: The present invention discloses a built-in type outdoor unit for an air conditioner to provide an efficient installation structure for installing the outdoor unit increased in capacity due to high air conditioning capacity in a built-in type.
    Type: Application
    Filed: July 3, 2003
    Publication date: December 2, 2004
    Inventors: In-Gyu Kim, Young-Ju Bae, Jae-Hyung Koo, Byung-Il Park, Kycong-Ho Kim, Yang-Ho Kim, Young-Ho Hong, Kyeong-Wook Heo, Kang-Wook Cha, Si-Kyong Sung, Dong-Hyuk Lee, Seong-Min Kang, Tac-Goun Kim
  • Patent number: 6649471
    Abstract: Disclosed is a method of planarizing a non-volatile memory device. After forming a floating gate structure on a cell area of a semiconductor substrate, a conductive layer, a hard mask layer and a first insulating layer are sequentially formed on the entire surface of the resultant structure. After removing the first insulating layer of the cell area to leave a first insulating layer pattern only on the peripheral circuit area, the hard mask layer of the cell area is removed. A second insulating layer is formed on the conductive layer and the insulating layer pattern to increase the height of the insulating layer on the peripheral circuit area. The second insulating layer and the first insulating layer pattern are removed until the floating gate structure is exposed, thereby planarizing the cell area and the peripheral circuit area.
    Type: Grant
    Filed: July 25, 2002
    Date of Patent: November 18, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-Soo Cho, Dong-Jun Kim, Eui-Youl Ryu, Dai-Goun Kim, Young-Hee Kim, Sang-Rok Hah, Kwang-Bok Kim, Jeong-Lim Nam, Kyung-Hyun Kim
  • Publication number: 20030022442
    Abstract: Disclosed is a method of planarizing a non-volatile memory device. After forming a floating gate structure on a cell area of a semiconductor substrate, a conductive layer, a hard mask layer and a first insulating layer are sequentially formed on the entire surface of the resultant structure. After removing the first insulating layer of the cell area to leave a first insulating layer pattern only on the peripheral circuit area, the hard mask layer of the cell area is removed. A second insulating layer is formed on the conductive layer and the insulating layer pattern to increase the height of the insulating layer on the peripheral circuit area. The second insulating layer and the first insulating layer pattern are removed until the floating gate structure is exposed, thereby planarizing the cell area and the peripheral circuit area.
    Type: Application
    Filed: July 25, 2002
    Publication date: January 30, 2003
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Min-Soo Cho, Dong-Jun Kim, Eui-Youl Ryu, Dai-Goun Kim, Young-Hee Kim, Sang-Rok Hah, Kwang-Bok Kim, Jeong-Lim Nam, Kyung-Hyun Kim