Abstract: Disclose is a copper alloy for a laser cladding valve seat. the copper alloy may include an amount of about 15.0 to 25.0 wt % of Ni, an amount of about 1.0 to 4.0 wt % of Si, an amount of about 0.5 to 1.0 wt % of B, an amount of about 1.0 to 2.0 wt % of Cr, an amount of about 5.0 to 15.0 wt % of Co, an amount of about 2.0 to 20.0 wt % of Mo, an amount of about 0.1 to 0.5 wt % of Ti and the balance Cu, all the wt % based on the total weight of the copper alloy. Particularly, the copper alloy may not include Fe, and may include Ti silicacide. Further disclosed is a laser cladding valve seat including the copper alloy, which does not generate cracks and is excellent in wear resistance.

Abstract: Disclose is a copper alloy for a laser cladding valve seat. the copper alloy may include an amount of about 15.0 to 25.0 wt % of Ni, an amount of about 1.0 to 4.0 wt % of Si, an amount of about 0.5 to 1.0 wt % of B, an amount of about 1.0 to 2.0 wt % of Cr, an amount of about 5.0 to 15.0 wt % of Co, an amount of about 2.0 to 20.0 wt % of Mo, an amount of about 0.1 to 0.5 wt % of Ti and the balance Cu, all the wt % based on the total weight of the copper alloy. Particularly, the copper alloy may not include Fe, and may include Ti silicacide. Further disclosed is a laser cladding valve seat including the copper alloy, which does not generate cracks and is excellent in wear resistance.

Abstract: A semiconductor package with improved redistribution layer design and fabricating method thereof are disclosed and may include a semiconductor die comprising bond pads, a first redistribution layer (RDL) formed on the semiconductor die. The first RDL has a first end coupled to a bond pad and a second end coupled to a solder bump via under bump metal layers. A second RDL is formed in a same plane of the semiconductor die as the first RDL and is electrically isolated from the first RDL. A first end of the second RDL may be coupled to a bond pad and the second RDL may pass underneath, but be electrically isolated from, the solder bump. A passivation layer may be formed on the first and second RDLs exposing the second end of the first RDL. The under bump metal layers may be formed on the second end of the first RDL exposed by the passivation layer.

Abstract: A semiconductor package with improved redistribution layer design and fabricating method thereof are disclosed and may include a semiconductor die comprising bond pads, a first redistribution layer (RDL) formed on the semiconductor die. The first RDL has a first end coupled to a bond pad and a second end coupled to a solder bump via under bump metal layers. A second RDL is formed in a same plane of the semiconductor die as the first RDL and is electrically isolated from the first RDL. A first end of the second RDL may be coupled to a bond pad and the second RDL may pass underneath, but be electrically isolated from, the solder bump. A passivation layer may be formed on the first and second RDLs exposing the second end of the first RDL. The under bump metal layers may be formed on the second end of the first RDL exposed by the passivation layer.