Patents by Inventor Go Woon Jung

Go Woon Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250122601
    Abstract: A cam ring and plate module for vehicle vacuum pumps in which, when an oxide layer formed through steam treatment comes into contact with a carbon or graphite material, a uniform carbon layer is stacked on the oxide layer so as to improve corrosion resistance, wear resistance, hardness and seal resistance.
    Type: Application
    Filed: January 25, 2024
    Publication date: April 17, 2025
    Inventors: Hak Soo Kim, Go Woon Jung, Jin Hyeon Lee, Seung Yong Shin, Seung Woo Lee, O Su Jang
  • Publication number: 20250018469
    Abstract: A prealloy powder for powder metallurgy, a sintered part using the same, and a manufacturing method thereof, which is configured to prevent deterioration of core hardness along with surface hardening while maintaining excellent tensile strength by adjusting an alloy composition so that a bainite phase is formed. The sintered part, which is manufactured by powder metallurgy, includes 1.05 to 1.55 wt % of Cr, 0.3 to 0.5 wt % of Mo, 0.5 to 0.7 wt % of C, and a remaining of Fe and other unavoidable impurities.
    Type: Application
    Filed: October 30, 2023
    Publication date: January 16, 2025
    Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, KOREA SINTERED METAL CO., LTD.
    Inventors: Hak Soo Kim, Go Woon Jung, Jin Hyeon Lee, Jung Hyuk Kim, Joo Sung Park, Dong Kuk Jeong
  • Patent number: 11624103
    Abstract: Disclose is a copper alloy for a laser cladding valve seat. the copper alloy may include an amount of about 15.0 to 25.0 wt % of Ni, an amount of about 1.0 to 4.0 wt % of Si, an amount of about 0.5 to 1.0 wt % of B, an amount of about 1.0 to 2.0 wt % of Cr, an amount of about 5.0 to 15.0 wt % of Co, an amount of about 2.0 to 20.0 wt % of Mo, an amount of about 0.1 to 0.5 wt % of Ti and the balance Cu, all the wt % based on the total weight of the copper alloy. Particularly, the copper alloy may not include Fe, and may include Ti silicacide. Further disclosed is a laser cladding valve seat including the copper alloy, which does not generate cracks and is excellent in wear resistance.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: April 11, 2023
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Young-Nam Kim, Go-Woon Jung, Gi-Bum Kim, Han-Jae Kim
  • Publication number: 20210180156
    Abstract: Disclose is a copper alloy for a laser cladding valve seat. the copper alloy may include an amount of about 15.0 to 25.0 wt % of Ni, an amount of about 1.0 to 4.0 wt % of Si, an amount of about 0.5 to 1.0 wt % of B, an amount of about 1.0 to 2.0 wt % of Cr, an amount of about 5.0 to 15.0 wt % of Co, an amount of about 2.0 to 20.0 wt % of Mo, an amount of about 0.1 to 0.5 wt % of Ti and the balance Cu, all the wt % based on the total weight of the copper alloy. Particularly, the copper alloy may not include Fe, and may include Ti silicacide. Further disclosed is a laser cladding valve seat including the copper alloy, which does not generate cracks and is excellent in wear resistance.
    Type: Application
    Filed: June 1, 2020
    Publication date: June 17, 2021
    Inventors: Young-Nam Kim, Go-Woon Jung, Gi-Bum Kim, Han-Jae Kim
  • Patent number: 9293403
    Abstract: A semiconductor package with improved redistribution layer design and fabricating method thereof are disclosed and may include a semiconductor die comprising bond pads, a first redistribution layer (RDL) formed on the semiconductor die. The first RDL has a first end coupled to a bond pad and a second end coupled to a solder bump via under bump metal layers. A second RDL is formed in a same plane of the semiconductor die as the first RDL and is electrically isolated from the first RDL. A first end of the second RDL may be coupled to a bond pad and the second RDL may pass underneath, but be electrically isolated from, the solder bump. A passivation layer may be formed on the first and second RDLs exposing the second end of the first RDL. The under bump metal layers may be formed on the second end of the first RDL exposed by the passivation layer.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: March 22, 2016
    Assignee: Amkor Technology, Inc.
    Inventors: No Sun Park, Ji Yeon Ryu, Go Woon Jung
  • Publication number: 20140061900
    Abstract: A semiconductor package with improved redistribution layer design and fabricating method thereof are disclosed and may include a semiconductor die comprising bond pads, a first redistribution layer (RDL) formed on the semiconductor die. The first RDL has a first end coupled to a bond pad and a second end coupled to a solder bump via under bump metal layers. A second RDL is formed in a same plane of the semiconductor die as the first RDL and is electrically isolated from the first RDL. A first end of the second RDL may be coupled to a bond pad and the second RDL may pass underneath, but be electrically isolated from, the solder bump. A passivation layer may be formed on the first and second RDLs exposing the second end of the first RDL. The under bump metal layers may be formed on the second end of the first RDL exposed by the passivation layer.
    Type: Application
    Filed: July 31, 2013
    Publication date: March 6, 2014
    Inventors: No Sun Park, Ji Yeon Ryu, Go Woon Jung