Patents by Inventor Gobind Bisht

Gobind Bisht has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self aligned gratings for tight pitch interconnects and methods of fabrication
    Patent number: 12131991
    Abstract: An integrated circuit interconnect structure includes a first metallization level including a first metal line having a first sidewall and a second sidewall extending a length in a first direction. A second metal line is adjacent to the first metal line and a dielectric is between the first metal line and the second metal line. A second metallization level is above the first metallization level where the second metallization level includes a third metal line extending a length in a second direction orthogonal to the first direction. The third metal line extends over the first metal line and the second metal line but not beyond the first sidewall. A conductive via is between the first metal line and the third metal line where the conductive via does not extend beyond the first sidewall or beyond the second sidewall.
    Type: Grant
    Filed: February 14, 2022
    Date of Patent: October 29, 2024
    Assignee: Intel Corporation
    Inventors: Manish Chandhok, Leonard Guler, Paul Nyhus, Gobind Bisht, Jonathan Laib, David Shykind, Gurpreet Singh, Eungnak Han, Noriyuki Sato, Charles Wallace, Jinnie Aloysius
  • SELF ALIGNED GRATINGS FOR TIGHT PITCH INTERCONNECTS AND METHODS OF FABRICATION
    Publication number: 20220173034
    Abstract: An integrated circuit interconnect structure includes a first metallization level including a first metal line having a first sidewall and a second sidewall extending a length in a first direction. A second metal line is adjacent to the first metal line and a dielectric is between the first metal line and the second metal line. A second metallization level is above the first metallization level where the second metallization level includes a third metal line extending a length in a second direction orthogonal to the first direction. The third metal line extends over the first metal line and the second metal line but not beyond the first sidewall. A conductive via is between the first metal line and the third metal line where the conductive via does not extend beyond the first sidewall or beyond the second sidewall.
    Type: Application
    Filed: February 14, 2022
    Publication date: June 2, 2022
    Applicant: Intel Corporation
    Inventors: Manish Chandhok, Leonard Guler, Paul Nyhus, Gobind Bisht, Jonathan Laib, David Shykind, Gurpreet Singh, Eungnak Han, Noriyuki Sato, Charles Wallace, Jinnie Aloysius
  • Self aligned gratings for tight pitch interconnects and methods of fabrication
    Patent number: 11251117
    Abstract: An integrated circuit interconnect structure includes a first metallization level including a first metal line having a first sidewall and a second sidewall extending a length in a first direction. A second metal line is adjacent to the first metal line and a dielectric is between the first metal line and the second metal line. A second metallization level is above the first metallization level where the second metallization level includes a third metal line extending a length in a second direction orthogonal to the first direction. The third metal line extends over the first metal line and the second metal line but not beyond the first sidewall. A conductive via is between the first metal line and the third metal line where the conductive via does not extend beyond the first sidewall or beyond the second sidewall.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: February 15, 2022
    Assignee: Intel Corporation
    Inventors: Manish Chandhok, Leonard Guler, Paul Nyhus, Gobind Bisht, Jonathan Laib, David Shykind, Gurpreet Singh, Eungnak Han, Noriyuki Sato, Charles Wallace, Jinnie Aloysius
  • SELF ALIGNED GRATINGS FOR TIGHT PITCH INTERCONNECTS AND METHODS OF FABRICATION
    Publication number: 20210074632
    Abstract: An integrated circuit interconnect structure includes a first metallization level including a first metal line having a first sidewall and a second sidewall extending a length in a first direction. A second metal line is adjacent to the first metal line and a dielectric is between the first metal line and the second metal line. A second metallization level is above the first metallization level where the second metallization level includes a third metal line extending a length in a second direction orthogonal to the first direction. The third metal line extends over the first metal line and the second metal line but not beyond the first sidewall. A conductive via is between the first metal line and the third metal line where the conductive via does not extend beyond the first sidewall or beyond the second sidewall.
    Type: Application
    Filed: September 5, 2019
    Publication date: March 11, 2021
    Applicant: Intel Corporation
    Inventors: Manish Chandhok, Leonard Guler, Paul Nyhus, Gobind Bisht, Jonathan Laib, David Shykind, Gurpreet Singh, Eungnak Han, Noriyuki Sato, Charles Wallace, Jinnie Aloysius