Abstract: A circulating shift register memory, particularly adaptable to charge coupled device technology, wherein a plurality of circulating shift registers are arranged to provide a matrix of data bits accessible at a common data front. Address counter circuitry cooperating with the register clocking circuits selects a particular bit location on the data front for each shift of the shift registers. Depending upon a mode signal and beginning address from a host system, the address counter circuitry provides successive accesses in predetermined patterns, for example along a row, column or diagonal of the bit matrix.

Abstract: A circular shift register memory system comprising L sections each having K circular charge storage shift registers of N bits each for storing blocks of N, K-bit words and accessing the words or blocks thereof in parallel. The L memory sections are refreshed by N-bit clock bursts which are successively and periodically applied to the memory sections by a refresh counter, decoder and gating logic. A read/write decoder decodes memory section addresses and controls the application of N-bit clock bursts to the particular addressed memory sections for access purposes. In a random access mode, word access is facilitated by counters which count the number of read/write or refresh clock pulses for comparison to a word address.

Abstract: This disclosure relates to a charge coupled device memory that is content or associative addressable with the respective word locations (loops) being searched concurrently although word access is serial in manner. Data bits in respective word loops are arranged in a staggered manner such that when the first bit of the first word is at its comparison location, the second bit of the second word is at its comparison location and so forth. The comparand and mask bits are shifted serially from comparison location to comparison location and recirculated in synchronism with the recirculation of the word loops. Content addressing logic includes a series of match bit shift registers, one for each comparison location, to record match occurrences. When a word match occurs, the address of the respective word loop is sent to the memory to read out the data bits stored therein.

Abstract: A charge coupled device shift register memory structure wherein the shift registers may be selectively activated. Each shift register is clocked by a common set of clock phase electrodes. Individual inhibit lines are placed over each shift register channel, and by applying appropriate voltages to these inhibit lines shifting of data in the underlying channel is prevented. In one embodiment, a channel decoder, common source and drain lines and cooperating gating circuitry facilitate read/write and refresh operations.

Abstract: An extendable memory organization capable of last-in-first-out or first-in-first-out operation comprising a stack of charge coupled device shift registers arranged such that each register shifts data in a direction opposite to that of its adjoining neighbors in the stack. Gating interconnecting the registers is selectively operable to enable read and write operations at either of the stack and up or down shifting of data in the stack. In particular, the gating and control structure permits refreshing the memory by alternately shifting each stored data word up and down between two storage positions in the stack. In one embodiment, gating and control is implemented in a sandwich structure incorporated into the charge coupled shift register channel.