Patents by Inventor Goeran KLOSE

Goeran KLOSE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing polycrystalline silicon
    Patent number: 10562779
    Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: February 18, 2020
    Assignee: WACKER CHEMIE AG
    Inventors: Goeran Klose, Heinz Kraus, Franz Salzeder
  • PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
    Publication number: 20180065858
    Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.
    Type: Application
    Filed: November 13, 2017
    Publication date: March 8, 2018
    Applicant: WACKER CHEMIE AG
    Inventors: Goeran KLOSE, Heinz KRAUS, Franz SALZEDER
  • Process for producing polycrystalline silicon
    Patent number: 9845247
    Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: December 19, 2017
    Assignee: WACKER CHEMIE AG
    Inventors: Goeran Klose, Heinz Kraus, Franz Salzeder
  • Polycrystalline silicon deposition method
    Patent number: 9738530
    Abstract: The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0° to 45° to the reactor wall, towards the base plate of the reactor.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: August 22, 2017
    Assignee: WACKER CHEMIE AG
    Inventors: Goeran Klose, Heinz Kraus, Tobias Weiss
  • POLYCRYSTALLINE SILICON DEPOSITION METHOD
    Publication number: 20160297684
    Abstract: The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0° to 45° to the reactor wall, towards the base plate of the reactor.
    Type: Application
    Filed: February 26, 2014
    Publication date: October 13, 2016
    Inventors: Goeran KLOSE, Heinz KRAUS, Tobias WEISS
  • PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
    Publication number: 20160167971
    Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.
    Type: Application
    Filed: July 10, 2014
    Publication date: June 16, 2016
    Applicant: Wacker Chemie AG
    Inventors: Goeran KLOSE, Heinz KRAUS, Franz SALZEDER