Patents by Inventor GOH IIJIMA

GOH IIJIMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ammonia synthesis catalyst
    Patent number: 9592495
    Abstract: An ammonia synthesis catalyst synthesizing ammonia from nitrogen in a presence of moisture is provided. The ammonia synthesis catalysis includes a catalyst particle including an inorganic material that has a photocatalytic function and an inorganic acid. The catalyst particle is preferably an n-type semiconductor and includes oxide material including at least titanium preferably. The inorganic acid preferably corresponds to at least one of perchloric acid, hydrochloric acid, sulfuric acid, and phosphoric acid.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: March 14, 2017
    Assignee: DENSO CORPORATION
    Inventors: Masaki Yoshinaga, Hiroaki Yotou, Goh Iijima, Yoshimasa Hijikata
  • PURIFICATION CATALYST
    Publication number: 20150174557
    Abstract: A purification catalyst that purifies nitric acid is provided in the present disclosure. The purification catalyst includes a catalyst particle, an inorganic acid, and water. The catalyst particle includes a metal oxide that has a function of an n-type semiconductor. The purification catalyst purifies the nitric acid under at least one of a light irradiation condition and a heating condition.
    Type: Application
    Filed: December 17, 2014
    Publication date: June 25, 2015
    Inventors: HIROAKI YOTOU, MASAKI YOSHINAGA, GOH IIJIMA, YOSHIMASA HIJIKATA
  • AMMONIA SYNTHESIS CATALYST
    Publication number: 20150174558
    Abstract: An ammonia synthesis catalyst synthesizing ammonia from nitrogen in a presence of moisture is provided. The ammonia synthesis catalysis includes a catalyst particle including an inorganic material that has a photocatalytic function and an inorganic acid. The catalyst particle is preferably an n-type semiconductor and includes oxide material including at least titanium preferably. The inorganic acid preferably corresponds to at least one of perchloric acid, hydrochloric acid, sulfuric acid, and phosphoric acid.
    Type: Application
    Filed: December 17, 2014
    Publication date: June 25, 2015
    Inventors: MASAKI YOSHINAGA, HIROAKI YOTOU, GOH IIJIMA, YOSHIMASA HIJIKATA