Patents by Inventor Golam Kibria
Golam Kibria has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11613819Abstract: An abrupt interface electroreduction catalyst includes a porous gas diffusion layer and a catalyst layer providing a sharp reaction interface. The electroreduction catalyst can be used for converting CO2 into a target product such as ethylene. The porous gas diffusion layer can be hydrophobic and configured for contacting gas-phase CO2 while the catalyst layer is disposed on and covers a reaction interface side of the porous gas diffusion layer. The catalyst layer has another side contacting an electrolyte and can be hydrophilic, composed a metal such as Cu and is sufficiently thin to prevent diffusion limitations of the reactant in the electrolyte and enhance selectivity for the target product. The electroreduction catalyst can be made by vapor deposition methods and can be used for electrochemical production of ethylene in reaction system.Type: GrantFiled: June 21, 2018Date of Patent: March 28, 2023Inventors: Cao-Thang Dinh, Thomas Burdyny, Md Golam Kibria, Ali Seifitokaldani, David Sinton, Edward Sargent
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Patent number: 11484861Abstract: InGaN offers a route to high efficiency overall water splitting under one-step photo-excitation. Further, the chemical stability of metal-nitrides supports their use as an alternative photocatalyst. However, the efficiency of overall water splitting using InGaN and other visible light responsive photocatalysts has remained extremely low despite prior art work addressing optical absorption through band gap engineering. Within this prior art the detrimental effects of unbalanced charge carrier extraction/collection on the efficiency of the four electron-hole water splitting reaction have remained largely unaddressed. To address this growth processes are presented that allow for controlled adjustment and establishment of the appropriate Fermi level and/or band bending in order to allow the photochemical water splitting to proceed at high rate and high efficiency. Beneficially, establishing such material surface charge properties also reduces photo-corrosion and instability under harsh photocatalysis conditions.Type: GrantFiled: January 22, 2020Date of Patent: November 1, 2022Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Zetian Mi, Md Golam Kibria, Mohammad Faqrul Alam Chowdhury
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Patent number: 10874610Abstract: This invention is related to use of exosomes for biomarker analysis for early detecting and characterizing of disease progression of cancer. Further, the invention provides bioengineered exosomes for use in methods of targeting and treating cancer.Type: GrantFiled: October 19, 2017Date of Patent: December 29, 2020Assignees: Northwestern University, Case Western Reserve UniversityInventors: Huiping Liu, Erika K. Ramos, Nurmaa K. Dashzeveg, Golam Kibria
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Publication number: 20200156041Abstract: InGaN offers a route to high efficiency overall water splitting under one-step photo-excitation. Further, the chemical stability of metal-nitrides supports their use as an alternative photocatalyst. However, the efficiency of overall water splitting using InGaN and other visible light responsive photocatalysts has remained extremely low despite prior art work addressing optical absorption through band gap engineering. Within this prior art the detrimental effects of unbalanced charge carrier extraction/collection on the efficiency of the four electron-hole water splitting reaction have remained largely unaddressed. To address this growth processes are presented that allow for controlled adjustment and establishment of the appropriate Fermi level and/or band bending in order to allow the photochemical water splitting to proceed at high rate and high efficiency. Beneficially, establishing such material surface charge properties also reduces photo-corrosion and instability under harsh photocatalysis conditions.Type: ApplicationFiled: January 22, 2020Publication date: May 21, 2020Inventors: Zetian MI, Md Golam KIBRIA, Mohammad Faqrul Alam CHOWDHURY
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Publication number: 20200141015Abstract: An abrupt interface electroreduction catalyst includes a porous gas diffusion layer and a catalyst layer providing a sharp reaction interface. The electroreduction catalyst can be used for converting CO2 into a target product such as ethylene. The porous gas diffusion layer can be hydrophobic and configured for contacting gas-phase CO2 while the catalyst layer is disposed on and covers a reaction interface side of the porous gas diffusion layer. The catalyst layer has another side contacting an electrolyte and can be hydrophilic, composed a metal such as Cu and is sufficiently thin to prevent diffusion limitations of the reactant in the electrolyte and enhance selectivity for the target product. The electroreduction catalyst can be made by vapor deposition methods and can be used for electrochemical production of ethylene in reaction system.Type: ApplicationFiled: June 21, 2018Publication date: May 7, 2020Applicant: THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTOInventors: Cao-Thang DINH, Thomas BURDYNY, Md Golam KIBRIA, Ali SEIFITOKALDANI, David SINTON, Edward SARGENT
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Patent number: 10576447Abstract: InGaN offers a route to high efficiency overall water splitting under one-step photo-excitation. Further, the chemical stability of metal-nitrides supports their use as an alternative photocatalyst. However, the efficiency of overall water splitting using InGaN and other visible light responsive photocatalysts has remained extremely low despite prior art work addressing optical absorption through band gap engineering. Within this prior art the detrimental effects of unbalanced charge carrier extraction/collection on the efficiency of the four electron-hole water splitting reaction have remained largely unaddressed. To address this growth processes are presented that allow for controlled adjustment and establishment of the appropriate Fermi level and/or band bending in order to allow the photochemical water splitting to proceed at high rate and high efficiency. Beneficially, establishing such material surface charge properties also reduces photo-corrosion and instability under harsh photocatalysis conditions.Type: GrantFiled: July 31, 2015Date of Patent: March 3, 2020Assignee: THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITYInventors: Zetian Mi, Md Golam Kibria, Mohammad Faqrul Alam Chowdhury
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Publication number: 20180104187Abstract: This invention is related to use of exosomes for biomarker analysis for early detecting and characterizing of disease progression of cancer. Further, the invention provides bioengineered exosomes for use in methods of targeting and treating cancer.Type: ApplicationFiled: October 19, 2017Publication date: April 19, 2018Inventors: Huiping Liu, Erika K. Ramos, Nurmaa K. Dashzeveg, Golam Kibria
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Publication number: 20170216810Abstract: InGaN offers a route to high efficiency overall water splitting under one-step photo-excitation. Further, the chemical stability of metal-nitrides supports their use as an alternative photocatalyst. However, the efficiency of overall water splitting using InGaN and other visible light responsive photocatalysts has remained extremely low despite prior art work addressing optical absorption through band gap engineering. Within this prior art the detrimental effects of unbalanced charge carrier extraction/collection on the efficiency of the four electron-hole water splitting reaction have remained largely unaddressed. To address this growth processes are presented that allow for controlled adjustment and establishment of the appropriate Fermi level and/or band bending in order to allow the photochemical water splitting to proceed at high rate and high efficiency. Beneficially, establishing such material surface charge properties also reduces photo-corrosion and instability under harsh photocatalysis conditions.Type: ApplicationFiled: July 31, 2015Publication date: August 3, 2017Inventors: Zetian MI, Md Golam KIBRIA, Mohammad Faqrul Alam CHOWDHURY
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Patent number: 9240516Abstract: Amongst the candidates for very high efficiency electronics, solid state light sources, photovoltaics, and photoelectrochemical devices, and photobiological devices are those based upon metal-nitride nanowires. Enhanced nanowire performance typically require heterostructures, quantum dots, etc which requirement that these structures are grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. Methods of growing relatively defect free nanowires and associated structures for group IIIA-nitrides are presented without the requirement for foreign metal catalysts, overcoming the non-uniform growth of prior art techniques and allowing self-organizing quantum dot, quantum well and quantum dot-in-a-dot structures to be formed.Type: GrantFiled: July 14, 2015Date of Patent: January 19, 2016Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Zetian Mi, Md Golam Kibria
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Publication number: 20150325743Abstract: Amongst the candidates for very high efficiency electronics, solid state light sources, photovoltaics, and photoelectrochemical devices, and photobiological devices are those based upon metal-nitride nanowires. Enhanced nanowire performance typically require heterostructures, quantum dots, etc which requirement that these structures are grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. Methods of growing relatively defect free nanowires and associated structures for group IIIA-nitrides are presented without the requirement for foreign metal catalysts, overcoming the non-uniform growth of prior art techniques and allowing self-organizing quantum dot, quantum well and quantum dot-in-a-dot structures to be formed.Type: ApplicationFiled: July 14, 2015Publication date: November 12, 2015Inventors: ZETIAN MI, MD GOLAM KIBRIA
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Patent number: 9112085Abstract: Metal-nitride nanowires are amongst the candidates for very high efficiency electronics, solid state light sources, photovoltaics, photoelectrochemical devices, and photobiological devices. Enhanced performance typically requires heterostructures, quantum dots, etc within structures that are grown with relatively few defects and in a controllable reproducible manner. Additionally device design flexibility requires that the nanowire at the substrate be either InN or GaN. Methods of growing relatively defect free nanowires and associated structures for group IIIA-nitrides are presented without foreign metal catalysts thereby overcoming the non-uniform growth of prior art techniques and allowing self-organizing quantum dot, quantum well and quantum dot-in-a-dot structures to be formed, thereby supporting variety of high efficiency devices.Type: GrantFiled: April 19, 2013Date of Patent: August 18, 2015Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Zetian Mi, Md Golam Kibria