Patents by Inventor Golam Newaz

Golam Newaz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9076429
    Abstract: Metamaterial members for absorbing sound and pressure, and modular systems built of metamaterial members are provided. The metamaterial member includes an outer mass. The outer mass can have a cavity formed therein in which a stem coupled to an inner mass is disposed, or the outer mass can be solid and contain an inner mass embedded therein. The inner mass can include an inner core and an outer shell. Multiple metamaterial members can be attached to form a modular system for absorption of sound and pressure.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: July 7, 2015
    Assignee: WAYNE STATE UNIVERSITY
    Inventors: Tofiqul Islam, Golam Newaz, Mohammad Hailat
  • Publication number: 20140027201
    Abstract: Metamatenal members for absorbing sound and pressure, and modular systems built of metamaterial members are provided. The metamaterial member includes an outer mass. The outer mass can have a cavity formed therein in which a stem coupled to an inner mass is disposed, or the outer mass can be solid and contain an inner mass embedded therein. The inner mass can include an inner core and an outer shell. Multiple metamaterial members can be attached to form a modular system for absorption of sound and pressure.
    Type: Application
    Filed: January 31, 2012
    Publication date: January 30, 2014
    Applicant: Wayne State University
    Inventors: Tofiqul Islam, Golam Newaz, Mohammad Hailat
  • Patent number: 7994602
    Abstract: A thin-film metal-oxide compound includes a titanium dioxide layer having a thickness of about 100 to 1000 nanometers. The titanium dioxide layer has a single-phase anatase structure. The titanium dioxide layer is directly disposed on a substrate comprised of glass, sapphire, or silicon. A solar cell includes a backing layer, a p-n junction layer, a metal-oxide layer, a top electrical layer and a contact layer. The backing layer includes a p-type semiconductor material. The p-n junction layer has a first side disposed on a front side of the backing layer. The metal-oxide layer includes an n-type titanium dioxide film having a thickness in the range of about 100 to about 1000 nanometers. The metal-oxide layer is disposed on a second side of the p-n junction layer. The top electrical layer is disposed on the metal-oxide layer, and the contact layer is disposed on a back side of the backing layer.
    Type: Grant
    Filed: November 5, 2009
    Date of Patent: August 9, 2011
    Assignee: Wayne State University
    Inventors: Ibrahim Abdullah Al-Homoudi, Golam Newaz, Gregory W. Auner
  • Patent number: 7799707
    Abstract: Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: September 21, 2010
    Assignee: Wayne State University
    Inventors: Ronald J. Baird, Daniel G. Georgiev, Ivan Avrutsky, Golam Newaz, Gregory W. Auner
  • Publication number: 20100043881
    Abstract: A method for producing a thin film titanium dioxide is disclosed. The disclosed method for producing the thin film titanium dioxide includes performing a magnetron reactive sputtering process to vaporize at least portions of a titanium source in a sputtering chamber that is supplied with gaseous oxygen. The vaporized titanium reacts with the oxygen to form anatase titanium dioxide, which is deposited on a substrate within the sputtering chamber.
    Type: Application
    Filed: November 5, 2009
    Publication date: February 25, 2010
    Applicant: WAYNE STATE UNIVERSITY
    Inventors: Ibrahim Abdullah Ibrahim AlHomoudi, Golam Newaz, Gregory W. Auner
  • Patent number: 7632761
    Abstract: A method for producing a thin film titanium dioxide is disclosed. The disclosed method for producing the thin film titanium dioxide includes performing a magnetron reactive sputtering process to vaporize at least portions of a titanium source in a sputtering chamber that is supplied with gaseous oxygen. The vaporized titanium reacts with the oxygen to form anatase titanium dioxide, which is deposited on a substrate within the sputtering chamber.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: December 15, 2009
    Assignee: Wayne State University
    Inventors: Ibrahim Abdullah Al-Homoudi, Golam Newaz, Gregory W. Auner
  • Publication number: 20090142936
    Abstract: Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.
    Type: Application
    Filed: August 1, 2008
    Publication date: June 4, 2009
    Applicant: WAYNE STATE UNIVERSITY
    Inventors: RONALD J. BAIRD, Daniel G. Georgiev, Ivan Avrutsky, Golam Newaz, Gregory W. Auner
  • Patent number: 7402445
    Abstract: Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surface to provide two-dimensional heat transfer across the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form a nano-structure having an apical nano-tip for electron extraction.
    Type: Grant
    Filed: May 12, 2006
    Date of Patent: July 22, 2008
    Assignee: Wayne State University
    Inventors: Daniel G. Georgiev, Ivan Avrutsky, Ronald J. Baird, Golam Newaz, Gregory W. Auner
  • Publication number: 20070281419
    Abstract: A thin film titanium dioxide and method for producing the same are disclosed. The thin film titanium dioxide may be produced to have a thickness in the range of 100-1000 nm. The disclosed method for producing the thin film titanium dioxide includes performing a magnetron reactive sputtering process to vaporize at least portions of a titanium source in a sputtering chamber that is supplied with gaseous oxygen. The vaporized titanium reacts with the oxygen to form titanium dioxide, which is deposited on a substrate within the sputtering chamber. A solar cell and a carbon monoxide sensor utilizing the thin film titanium dioxide of the present invention are also disclosed.
    Type: Application
    Filed: June 1, 2007
    Publication date: December 6, 2007
    Inventors: Ibrahim Abdullah Ibrahim Alhomoudi, Golam Newaz, Gregory W. Auner
  • Publication number: 20060258133
    Abstract: Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surface to provide two-dimensional heat transfer across the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form a nano-structure having an apical nano-tip for electron extraction.
    Type: Application
    Filed: May 12, 2006
    Publication date: November 16, 2006
    Inventors: Daniel Georgiev, Ivan Avrutsky, Ronald Baird, Golam Newaz, Gregory Auner