Patents by Inventor Golam Newaz
Golam Newaz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9076429Abstract: Metamaterial members for absorbing sound and pressure, and modular systems built of metamaterial members are provided. The metamaterial member includes an outer mass. The outer mass can have a cavity formed therein in which a stem coupled to an inner mass is disposed, or the outer mass can be solid and contain an inner mass embedded therein. The inner mass can include an inner core and an outer shell. Multiple metamaterial members can be attached to form a modular system for absorption of sound and pressure.Type: GrantFiled: January 31, 2012Date of Patent: July 7, 2015Assignee: WAYNE STATE UNIVERSITYInventors: Tofiqul Islam, Golam Newaz, Mohammad Hailat
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Publication number: 20140027201Abstract: Metamatenal members for absorbing sound and pressure, and modular systems built of metamaterial members are provided. The metamaterial member includes an outer mass. The outer mass can have a cavity formed therein in which a stem coupled to an inner mass is disposed, or the outer mass can be solid and contain an inner mass embedded therein. The inner mass can include an inner core and an outer shell. Multiple metamaterial members can be attached to form a modular system for absorption of sound and pressure.Type: ApplicationFiled: January 31, 2012Publication date: January 30, 2014Applicant: Wayne State UniversityInventors: Tofiqul Islam, Golam Newaz, Mohammad Hailat
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Patent number: 7994602Abstract: A thin-film metal-oxide compound includes a titanium dioxide layer having a thickness of about 100 to 1000 nanometers. The titanium dioxide layer has a single-phase anatase structure. The titanium dioxide layer is directly disposed on a substrate comprised of glass, sapphire, or silicon. A solar cell includes a backing layer, a p-n junction layer, a metal-oxide layer, a top electrical layer and a contact layer. The backing layer includes a p-type semiconductor material. The p-n junction layer has a first side disposed on a front side of the backing layer. The metal-oxide layer includes an n-type titanium dioxide film having a thickness in the range of about 100 to about 1000 nanometers. The metal-oxide layer is disposed on a second side of the p-n junction layer. The top electrical layer is disposed on the metal-oxide layer, and the contact layer is disposed on a back side of the backing layer.Type: GrantFiled: November 5, 2009Date of Patent: August 9, 2011Assignee: Wayne State UniversityInventors: Ibrahim Abdullah Al-Homoudi, Golam Newaz, Gregory W. Auner
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Patent number: 7799707Abstract: Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.Type: GrantFiled: August 1, 2008Date of Patent: September 21, 2010Assignee: Wayne State UniversityInventors: Ronald J. Baird, Daniel G. Georgiev, Ivan Avrutsky, Golam Newaz, Gregory W. Auner
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Publication number: 20100043881Abstract: A method for producing a thin film titanium dioxide is disclosed. The disclosed method for producing the thin film titanium dioxide includes performing a magnetron reactive sputtering process to vaporize at least portions of a titanium source in a sputtering chamber that is supplied with gaseous oxygen. The vaporized titanium reacts with the oxygen to form anatase titanium dioxide, which is deposited on a substrate within the sputtering chamber.Type: ApplicationFiled: November 5, 2009Publication date: February 25, 2010Applicant: WAYNE STATE UNIVERSITYInventors: Ibrahim Abdullah Ibrahim AlHomoudi, Golam Newaz, Gregory W. Auner
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Patent number: 7632761Abstract: A method for producing a thin film titanium dioxide is disclosed. The disclosed method for producing the thin film titanium dioxide includes performing a magnetron reactive sputtering process to vaporize at least portions of a titanium source in a sputtering chamber that is supplied with gaseous oxygen. The vaporized titanium reacts with the oxygen to form anatase titanium dioxide, which is deposited on a substrate within the sputtering chamber.Type: GrantFiled: June 1, 2007Date of Patent: December 15, 2009Assignee: Wayne State UniversityInventors: Ibrahim Abdullah Al-Homoudi, Golam Newaz, Gregory W. Auner
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Publication number: 20090142936Abstract: Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.Type: ApplicationFiled: August 1, 2008Publication date: June 4, 2009Applicant: WAYNE STATE UNIVERSITYInventors: RONALD J. BAIRD, Daniel G. Georgiev, Ivan Avrutsky, Golam Newaz, Gregory W. Auner
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Patent number: 7402445Abstract: Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surface to provide two-dimensional heat transfer across the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form a nano-structure having an apical nano-tip for electron extraction.Type: GrantFiled: May 12, 2006Date of Patent: July 22, 2008Assignee: Wayne State UniversityInventors: Daniel G. Georgiev, Ivan Avrutsky, Ronald J. Baird, Golam Newaz, Gregory W. Auner
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Publication number: 20070281419Abstract: A thin film titanium dioxide and method for producing the same are disclosed. The thin film titanium dioxide may be produced to have a thickness in the range of 100-1000 nm. The disclosed method for producing the thin film titanium dioxide includes performing a magnetron reactive sputtering process to vaporize at least portions of a titanium source in a sputtering chamber that is supplied with gaseous oxygen. The vaporized titanium reacts with the oxygen to form titanium dioxide, which is deposited on a substrate within the sputtering chamber. A solar cell and a carbon monoxide sensor utilizing the thin film titanium dioxide of the present invention are also disclosed.Type: ApplicationFiled: June 1, 2007Publication date: December 6, 2007Inventors: Ibrahim Abdullah Ibrahim Alhomoudi, Golam Newaz, Gregory W. Auner
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Publication number: 20060258133Abstract: Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surface to provide two-dimensional heat transfer across the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form a nano-structure having an apical nano-tip for electron extraction.Type: ApplicationFiled: May 12, 2006Publication date: November 16, 2006Inventors: Daniel Georgiev, Ivan Avrutsky, Ronald Baird, Golam Newaz, Gregory Auner