Abstract: Methods for making multiple walled nested coaxial nanostructures and devices incorporating the coaxial nanostructures are disclosed. The coaxial nanostructures include an inner nanostructure, a first outer nanotube disposed around the inner nanostructure, and a first annular channel between the inner nanostructure and the first outer nanotube. The coaxial nanostructures have extremely high aspect ratios, ranging from about 5 to about 1,200, or about 300 to about 1200.

Abstract: Multiple walled nested coaxial nanostructures, methods for making multiple walled nested coaxial nanostructures, and devices incorporating the coaxial nanostructures are disclosed. The coaxial nanostructures include an inner nanostructure, a first outer nanotube disposed around the inner nanostructure, and a first annular channel between the inner nanostructure and the first outer nanotube. The coaxial nanostructures have extremely high aspect ratios, ranging from about 5 to about 1,200, or about 300 to about 1200.

Abstract: Multiple walled nested coaxial nanostructures, methods for making multiple walled nested coaxial nanostructures, and devices incorporating the coaxial nanostructures are disclosed. The coaxial nanostructures include an inner nanostructure, a first outer nanotube disposed around the inner nanostructure, and a first annular channel between the inner nanostructure and the first outer nanotube. The coaxial nanostructures have extremely high aspect ratios, ranging from about 5 to about 1,200, or about 300 to about 1200.

Abstract: Devices including photovoltaic cells and methods of manufacture are disclosed. A photovoltaic cell includes a first electrode layer, at least one photoactive layer disposed on first electrode layer, a second electrode layer disposed on the photoactive layer, at least one first carrier collector structure with a first work function electrically coupled to the first electrode layer and extending partially in to the photoactive layer, and at least one second carrier collector structure with a second work function electrically coupled to the second electrode layer and extending partially into the photoactive layer. In the cell, the first carrier collector structure extends towards the second electrode layer without physically contacting the second carrier collector structure, and the second carrier collector structure extends towards the first electrode layer without physically contacting the first carrier collector structure.

Abstract: A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0?x<1, 0<y?1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0?x<1, 0<y?1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.

Abstract: A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0?x<1, 0<y?1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0?x<1, 0<y?1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.