Abstract: Filter modules having a wider passband are provided herein. In certain embodiments, the filter module comprises an input node; an output node; a filter disposed along a signal path extending from the input node to the output node; a strip line configured to generate an inductance between the filter and a ground such to increase a bandwidth of a passband of the filter module, the single strip line disposed on multiple layers, each of the multiple layers defined by a plurality of pulse-shaped) portions of the strip line disposed on a plane.

Abstract: Reconfigurable patch antenna systems are provided herein. In certain embodiments, a mobile device includes a patch antenna configured to handle a radio frequency signal at a signal feed. The patch antenna includes a plurality of antenna segments. The front-end system further includes a plurality of switches each configured to control connection of a respective one of the first plurality of antenna segments to the first signal feed, and a control circuit configured to control the plurality of switches to provide a frequency adjustment to the patch antenna.

Abstract: Aspects of this disclosure relate to a filter that includes an acoustic wave device with a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate (e.g., a quartz substrate), a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the acoustic wave device. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. The thermally conductive layer has a thickness that is greater than 10 nanometers and less than a thickness of the piezoelectric layer.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer. The interdigital transducer electrode includes a pair of electrodes, each electrode having a bus bar and fingers extending from the bus bar. The interdigital transducer electrode has an interdigital region defined by a portion of the fingers of the electrodes that interdigitate with each other. A dielectric layer is disposed over the interdigital transducer electrode outside the interdigital region and configured to reduce a loss of the surface acoustic wave device.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator having a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate, a piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the surface acoustic wave resonator. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. Related surface acoustic wave filters, radio frequency modules, and wireless communication devices are also disclosed.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer. The interdigital transducer electrode includes a pair of electrodes, each electrode having a bus bar and fingers extending from the bus bar. The interdigital transducer electrode has an interdigital region defined by a portion of the fingers of the electrodes that interdigitate with each other. A dielectric layer is disposed over the interdigital transducer electrode outside the interdigital region and configured to reduce a loss of the surface acoustic wave device.

Abstract: Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.

Abstract: An acoustic wave device that includes a spinel layer, a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer is disclosed. The piezoelectric layer is disposed between the interdigital transducer electrode and the spinel layer. The acoustic wave device is configured to generate an acoustic wave having a wavelength of ?. The piezoelectric layer can have a thickness than is less than ?. In some embodiments, the acoustic wave device can include a temperature compensating layer that is disposed between the piezoelectric layer and the spinel layer.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer. The interdigital transducer electrode includes a pair of electrodes, each electrode having a bus bar and fingers extending from the bus bar. The interdigital transducer electrode has an interdigital region defined by a portion of the fingers of the electrodes that interdigitate with each other. A dielectric layer is disposed over the interdigital transducer electrode outside the interdigital region and configured to reduce a loss of the surface acoustic wave device.

Abstract: Filter modules having a wider passband are provided herein. In certain embodiments, the filter module comprises an input node; an output node; a filter disposed along a signal path extending from the input node to the output node; a strip line configured to generate an inductance between the filter and a ground such to increase a bandwidth of a passband of the filter module, the single strip line disposed on multiple layers, each of the multiple layers defined by a plurality of pulse-shaped) portions of the strip line disposed on a plane.

Abstract: A surface acoustic wave (SAW) resonator comprises a plurality of interdigital transducer electrodes disposed on a multilayer piezoelectric substrate (MPS) including a layer of piezoelectric material having a lower surface bonded to an upper surface of a layer of a second material different from the piezoelectric material that improves the temperature stability and reliability of the SAW resonator, and a layer of dielectric material disposed on an upper surface of the interdigital transducer electrodes and MPS.

Abstract: Acoustic wave resonators are disclosed that include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a rotation angle and a tilt angle. The rotation angle and the tilt angle can together increase a figure of merit of the acoustic wave device. The rotation angle and the tilt angle can both be non-zero.

Abstract: A surface acoustic wave (SAW) resonator comprises a plurality of interdigital transducer (IDT) electrodes disposed on a multilayer piezoelectric substrate including a layer of piezoelectric material having a lower surface bonded to an upper surface of a layer of a dielectric material. The dielectric material has a lower surface bonded to an upper surface of a carrier substrate. The plurality of IDT electrodes include an upper layer and a lower layer. The upper layer is formed of a material having a higher conductivity than the lower layer. The lower layer is formed of a material having a higher density than the upper layer to provide for reduction in size of the SAW resonator.

Abstract: Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. A thickness of the interdigital transducer electrode is at least 40% of a thickness of the piezoelectric layer, 400 nm, or 0.08? where ? is the wavelength generated by the acoustic wave device.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

Abstract: Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode having a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. The interdigital transducer electrode is configured to shift stopband of the acoustic wave device and to reduce a slanted stopband.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a non-zero tilt angle that provides an improved quality factor as compared to a zero tilt angle. The acoustic wave device is configured to generate a surface acoustic wave having a wavelength L. A total number of fingers of the interdigital transducer electrode is between 50 L and 100 L. A width between a finger of the interdigital transducer electrode and an adjacent finger of interdigital transducer electrode is between 20 L and 40 L.

Abstract: A film bulk acoustic wave resonator (FBAR) is disclosed with raised and recessed frame portions formed in a top electrode. The FBAR can include a substrate, a piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.

Abstract: A film bulk acoustic wave resonator (FBAR) is disclosed with recessed and raised frame portions in the piezoelectric film. The FBAR can include a substrate, the piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed in the film to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.

Abstract: Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.