Patents by Inventor Gongyi CHEN

Gongyi CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11991874
    Abstract: A semiconductor structure includes a substrate, a bit line, and a first isolation layer. A groove is set in the substrate. A bottom end of the bit line is set in the groove. The first isolation layer is at least partially set on a sidewall of the bit line, and the first isolation layer is in direct contact with the bit line.
    Type: Grant
    Filed: July 30, 2021
    Date of Patent: May 21, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Longyang Chen, Gongyi Wu
  • Patent number: 11956944
    Abstract: Embodiments of the present application provide a semiconductor structure formation method and a semiconductor structure. The method includes: the substrate including contact region and dummy region, a first bitline structure and a first dielectric layer being formed on the substrate, the first bitline structure and the first dielectric layer defining discrete capacitor contact openings; forming a first sacrificial layer filling the capacitor contact opening; removing, in the dummy region, part of height of the first bitline structure, part of height of the first dielectric layer and part of height of the first sacrificial layer to form a first opening located at top of a second bitline structure, a second dielectric layer and a second sacrificial layer; forming an insulation layer filling the first opening; removing, in the contact region, the first sacrificial layer to form a second opening; and forming a capacitor contact structure located in the second opening.
    Type: Grant
    Filed: November 22, 2021
    Date of Patent: April 9, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Longyang Chen, Hongfa Wu, Gongyi Wu
  • Publication number: 20230422429
    Abstract: A cooling apparatus, comprising a mainboard and a cooling fan, where the novel cooling apparatus comprises: a heat sink, provided on the mainboard and affixed to one end of a vent of the cooling fan. The heat sink comprises: a groove, used for accommodating a heat-generating component provided on the mainboard; cooling fins, distributed within the heat sink and arranged on two sides of the groove. A venting and cooling channel is constituted between the interior of the heat sink and the vent of the cooling fan. The beneficial effect of the technical solution is such that, with other heat-generating components placed in the heat sink, the space in the heat sink is fully utilized, the fan is utilized to cool the heat sink and the heat-generating components therein, thus increasing the utilization rate of the fan, increasing the cooling efficiency, and effectively utilizing space.
    Type: Application
    Filed: August 2, 2021
    Publication date: December 28, 2023
    Applicant: NEW FOCUS LIGHTING & POWER TECHNOLOGY (SHANGHAI) CO., LTD.
    Inventors: Chunyang MA, Yu LIU, Shiquan GONG, Gongyi CHEN