Abstract: A method and an apparatus for uniform electroless plating of layers onto exposed metallizations in integrated circuits such as bond pads. The apparatus provides means for holding a plurality of wafers, and rotating each wafer at constant speed and synchronous within the plurality. Immersed in a plating solution flowing in substantially laminar motion and at constant speed, the method creates periodic superposition of directions and speeds of the motion of the wafers and the motion of the plating solution. The invention creates periodically changing wafer portions where the directions and speeds are additive and where the directions and speeds are opposed and subtractive. Consequently, highly uniformly layers are electrolessly plated onto the exposed metallizations of bond pads. If the plated layers are bondable metals, the process transforms otherwise unbondable pad metallization into bondable pads.

Abstract: A robust, reliable and low-cost metal structure and process enabling electrical wire/ribbon connections to the interconnecting copper metallization of integrated circuits. The structure comprises a layer of barrier metal that resists copper diffusion, deposited on the non-oxidized copper surface in a thickness such that the barrier layer reduces the diffusion of copper at 250° C. by more than 80% compared with the absence of the barrier metal. The structure further comprises an outermost bondable layer which reduces the diffusion of the barrier metal at 250° C. by more than 80% compared with the absence of the bondable metal. Finally, a metal wire is bonded to the outermost layer for metallurgical connection.

Abstract: A robust, reliable and low-cost metal structure and process enabling electrical wire/ribbon connections to the interconnecting copper metallization of integrated circuits. The structure comprises a layer of first barrier metal, deposited on the non-oxidized copper surface, having a copper diffusion coefficient of less than 1×10E-23 cm2/s at 250° C. and a thickness from about 0.5 to 1.5 &mgr;m. It further comprises a layer of second barrier metal on the layer of first barrier metal, having a diffusion coefficient of the first barrier metal of less than 1×10E-14 cm2/s at 250° C. and a thickness of less than 1.5 &mgr;m. It finally comprises an outermost layer of bondable metal, onto which a metal wire is bonded for metallurgical connection.

Abstract: A method for loading solder particles (14) onto an substrate comprising applying a flux (18) directly onto solder particles (14) either prior to or following adhering the solder particles (14) onto adhesive areas (30) of an adhesive coated film (20). The adhesive areas (30) of the adhesive coated film (20) are oriented to correspond with contact pads (42) of a substrate (16). The adhesive coated film (20) is aligned with the substrate (16) to transfer the solder particles (14) to the contact pads (42). The solder particles (14) may then be reflowed to securely attach the solder particles (14) to the contact pads(42).

Abstract: An apparatus for mass fabrication of a semiconductor assembly comprising optical sources for supplying radiant energy for rapid and controlled heating of a multitude of integrated circuit chips and substrates. The resultant thermal profile is applied to reflowing solder interconnections as well as to filling chip-to-substrate gaps with polymeric precursors whereby any mechanical stress detrimental to mechanically weak solder joints and dielectric layers is avoided. The apparatus contains dispensing equipment with multiple degrees of freedom so that the chips and substraters to be assembled do not have to be moved within or from the apparatus. Processing in controlled environment is feasible.

Abstract: A method and apparatus for selectively heating a structure capable of absorbing heat radiations in the 0.5 to 2 micron range relative to an adjacent structure wherein a first structure capable of absorbing heat radiations in the 0.5 to 2 micron range is disposed adjacent a second structure much less capable of absorbing heat radiations in the 0.5 to 2 micron range. An unfocused heat source which provides a major portion of its heat energy in the range of from about 0.5&mgr; to about 2&mgr; relative to heat energy above 2&mgr; and below 0.5 micron directs heat concurrently to the first and second structures to heat the first structure to a temperature sufficiently high and much higher then the second structure to permit a predetermined function to be performed in conjunction with the first structure while maintaining the second structure below a predetermined temperature. The function is then performed. The heat source preferably comprises an unfocused tungsten halogen lamp.

Abstract: A system for positioning a carrier relative to a travel path which includes a base having a pair of opposing side walls extending normal to the base and defining a path therebetween. A force applying device is disposed in one of the side walls and extends into the path for applying a force in the direction of the other side wall. A pair of rotatable eccentric members is secured to the other of the walls and extends into the path for selectively positioning a carrier between the eccentric members and the force applying device.

Abstract: A system for applying a rotary force to strips of varying widths. The system includes a plurality of adjacent tracks of progressively greater width, each of the tracks disposed at a height above all tracks of lesser width. A plurality of rotating members are provided, one rotating member extending into one of the tracks and extending to the surface of the associated track. An adjustable drive disc is adjusted to be disposed over a preselected one of the rotating members and is movable toward the rotating members to apply a rotary force to a strip disposed between the rotating member and the disc. Each of the tracks is defined by a pair of spaced apart surfaces with all of the rotating members being on a common rotating shaft.

Abstract: In integrated semiconductor manufacturing, semiconductor dies may be packaged in ceramic packages. Such packages typically have a base into which the semiconductor die is securedly placed and typically have a lead frame securedly attached to base so that electrical connection may be made to the semiconductor die. A halagen lamp radiant chamber significantly reduces the time it takes to attach the die and lead frame to the ceramic base while reducing particles commonly associated with open belt converyor furnaces.

Abstract: A method of curing a die attach material for a semiconductor device which includes providing a carrier containing a plurality of stacked leadframe strips, each leadframe strip with a die attach material thereon. One leadframe strip is ejected from the carrier, travels into a chamber and is centered therein. The leadframe strip is then heated and the die attach material is cured selective to the leadframe strip using a tungsten-halogen lamp. Simultaneously volatile products of the cure are exhausted from the chamber. The leadframe strip is then returned to its original position in the carrier, the carrier is elevated so that a different leadframe strip is in position for ejection from the carrier and is ejected.

Abstract: A method and apparatus for selectively heating a structure (20) capable of absorbing heat radiations in the 0.5 to 2 micron range relative to an adjacent structure (24) wherein a first structure capable of absorbing heat radiations in the 0.5 to 2 micron range is disposed adjacent a second structure much less capable of absorbing heat radiations in the 0.5 to 2 micron range. An unfocused heat source (28) which provides a major portion of its heat energy in the range of from about 0.5.mu. to about 2.mu. relative to heat energy above 2.mu. and below 0.5 micron directs heat concurrently to the first and second structures to heat the first structure to a temperature sufficiently high and much higher then the second structure to permit a predetermined function to be performed in conjunction with the first structure while maintaining the second structure below a predetermined temperature. The function is then performed. The heat source preferably comprises an unfocused tungsten halogen lamp.

Abstract: A method and system for curing a die attach material for attachment of a semiconductor die to a leadframe which includes a carrier receiving location for receiving at least one carrier(1) wherein each carrier contains at least one leadframe strip (3) therein, a die attach material (15) on the leadframe strip and a semiconductor die (13) on the die attach material. A heat source (5) is provided for radiating thermal energy to the carrier receiving location. A reflector (9) is disposed around the heat source and the carrier receiving location for reflecting thermal energy from the heat source to the carrier receiving location. A source of flowing cool gas (11) is provided in heat exchange relationship with the reflector for cooling the reflector while heating the gas. The heated gas is passed through the carrier receiving location to provide a source of heat by convection at the carrier receiving location and purge the carrier receiving location of volatiles.

Abstract: Semiconductor die attach occurs by bonding the semiconductor die to a support member such as a lead frame. An optical heat source provides heat for bonding the die attach material. An exhaust system removes vapors from the die attach material during bonding. A tungsten halogen lamp is an exemplary optical heat source. An air amplifier is exemplary to provide exhaust pressure. An exhaust manifold having a plurality of screens spreads the exhaust pressure over the width of the lead frame. A gas shower disposed over the lead frame aids in removing vapors.

Abstract: A linear, direct-drive microelectronic bonding apparatus (10) provides a bondhead mounting plate (20), a stationary magnetic circuit (21), a moving coil (22), a primary wire clamp housing (23), a transducer mount (24), and a high frequency ultrasonic transducer (25) (above 100 kHz), and a capillary (26). Bondhead assembly (16) is configured to present a collective axial wire path bore (27) along which wire (12) is fed to bond site (28) for forming microelectronic bond interconnections at bond site (28). In accordance with the invention, collective wire path bore (27) provides a protected method of feeding wire (12) to bonding site (28), while magnetic circuit (21) and moving coil (22) provide actuation in a substantially linear downward direction towards the bonding site. In contradistinction, prior art bonding strokes, rather than being substantially linear, are arc-like due to the capillary and transducer being perpendicular to one another.

Abstract: A voice coil actuated wire tensioner is used on a wire bonder in conjunction with a primary wire clamp to provide accurate control of the bond wire and looping of the bond wire between ball bonding of one end of a bond wire and stitch bonding of the other end of the bond wire.

Abstract: A damping layer of a material and a mounting plate is mounted between an optics tube on a wire bonder and the X-Y table, and between the optics tube and the bond head to dissipate vibrations caused when stepping motors move the X-Y table.