Abstract: The present disclosure relates to an organic film polishing composition in which a high polishing speed is maintained not only for polymers, an SOC, and an SOH, but also for organic films strongly bonded by covalent bonds such as an amorphous carbon layer (ACL) or a diamond-like carbon (DLC) by including a polishing accelerator containing both a hydrophilic group and a hydrophobic group, and a polishing method using the same.

Abstract: The present disclosure provides chemical-mechanical polishing (CMP) particles exhibiting a high polishing rate and a high polishing quality of generating few defects or scratches due to their modified surface thereof. The present disclosure also provides a polishing slurry composition including the polishing particles.

Abstract: A method of polishing a substrate having amorphous carbon layer deposited thereon removes protrusions on the ACL surface by using a soft pad with a low hardness and a polishing slurry containing non-spherical modified fumed silica with high friction force with the surface.

Abstract: The present disclosure provides chemical-mechanical polishing (CMP) particles exhibiting a high polishing rate and a high polishing quality of generating few defects or scratches due to their modified surface thereof. The present disclosure also provides a polishing slurry composition including the polishing particles.

Abstract: The present invention relates to a chemical mechanical polishing slurry composition, and more specifically, to a chemical mechanical polishing slurry composition that can polish an insulating film such as a silicon nitride film or a metal film such as tungsten alone or simultaneously, and particularly, can easily control the polishing speed, and thus minimize an interlayer step difference of a semiconductor device by using a compound having a phosphate group as an agent for controlling polishing selectivity, and selectively using a tertiary amine compound together with the agent for controlling polishing selectivity, and a method for polishing a semiconductor substrate using the same.

Abstract: The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a semiconductor integrated circuit, by lowering frictional force so that a temperature of the composition which may rise during the polishing is lowered, the thermal stability of the slurry is improved and the size increase of particles in the slurry is suppressed, and a method for reducing scratches using the same. The method comprises the steps of applying a slurry composition for polishing a metal film to a substrate on which the metal film is formed, the slurry composition containing an organic solvent including a nitrogen atom and a glycol-based organic solvent; and making a polishing pad to be contacted to the substrate and moving the polishing pad with respect to the substrate, thereby removing at least part of the metal film from the substrate.

Abstract: The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a semiconductor integrated circuit, by lowering frictional force so that a temperature of the composition which may rise during the polishing is lowered, the thermal stability of the slurry is improved and the size increase of particles in the slurry is suppressed, and a method for reducing scratches using the same. The method comprises the steps of applying a slurry composition for polishing a metal film to a substrate on which the metal film is formed, the slurry composition containing an organic solvent including a nitrogen atom and a glycol-based organic solvent; and making a polishing pad to be contacted to the substrate and moving the polishing pad with respect to the substrate, thereby removing at least part of the metal film from the substrate.