Abstract: A method of detecting defects of a photomask includes measuring registration errors of the photomask, correcting the measured registration errors using a registration control process with a laser beam, extracting deformation data of the photomask deformed by the registration control process, reflecting the extracted deformation data in defect detection parameters to obtain compensated defect detection parameters, and detecting defects of the photomask using the compensated defect detection parameters.

Abstract: A method of defect inspection for a photomask is provided. According to the method, a light transmittance correction is performed to reduce a light transmittance of a calibration key pattern region of a photomask including a field region and the calibration key pattern region to the light transmittance of the field region. Light calibration is performed using the calibration key pattern region having corrected light transmittance. Defect inspection for the field region is performed by applying a result of the light calibration.

Abstract: A method of defect inspection for a photomask is provided. According to the method, a light transmittance correction is performed to reduce a light transmittance of a calibration key pattern region of a photomask including a field region and the calibration key pattern region to the light transmittance of the field region. Light calibration is performed using the calibration key pattern region having corrected light transmittance. Defect inspection for the field region is performed by applying a result of the light calibration.

Abstract: A surface cleaning method includes forming a mask layer on a substrate, performing a first surface treatment process for scanning a surface of the mask layer with a first laser beam to stabilize the mask layer, patterning the mask layer to form a mask pattern, and performing a second surface treatment process for scanning surfaces of the mask pattern and the substrate with a second laser beam to remove contaminants on the mask pattern or the substrate.

Abstract: A method of detecting defects of a photomask includes measuring registration errors of the photomask, correcting the measured registration errors using a registration control process with a laser beam, extracting deformation data of the photomask deformed by the registration control process, reflecting the extracted deformation data in defect detection parameters to obtain compensated defect detection parameters, and detecting defects of the photomask using the compensated defect detection parameters.

Abstract: Disclosed is a mask for an EUV lithography, which includes: a mirror layer which reflects EUV incident on a substrate; an absorber pattern formed on the mirror layer so as to expose a first region and a second region in the mirror layer; and a first groove formed by recessing a third region in the first region of the mirror layer by a first depth and a second groove formed by recessing a fourth region in the second region of the mirror layer by a second depth, which is deeper than the first depth.

Abstract: A phase shift mask includes a substrate; a first phase shift pattern formed in a groove shape having a first depth within the substrate so that when a first light with a first wave length is incident, the first light transmitted through a surface of the substrate and the first light transmitted through the groove are destructively interfered and when a second light with a second wave length is incident, the second light transmitted through the surface of the substrate and the second light transmitted through the groove have a phase difference of 180 degrees; and a second phase shift pattern formed in a groove shape having a second depth within the substrate so that when the first light with the first wave length is incident, the first light transmitted through the surface of the substrate and the first light transmitted through the groove have a phase difference of 180 degrees and when the second light with the second wave length is incident, the second light transmitted through the surface of the substrate a

Abstract: Disclosed is a mask for an EUV lithography, which includes: a mirror layer which reflects EUV incident on a substrate; an absorber pattern formed on the mirror layer so as to expose a first region and a second region in the mirror layer; and a first groove formed by recessing a third region in the first region of the mirror layer by a first depth and a second groove formed by recessing a fourth region in the second region of the mirror layer by a second depth, which is deeper than the first depth.

Abstract: A method for manufacturing a photo mask includes forming a mask pattern over a transparent substrate; forming a photoresist over the transparent substrate; subjecting the photoresist to an exposure light from the rear of the transparent substrate to form a photoresist pattern on the mask pattern; and correcting a line width in the mask pattern using the photoresist pattern as a mask.

Abstract: A phase shift mask includes a substrate; a first phase shift pattern formed in a groove shape having a first depth within the substrate so that when a first light with a first wave length is incident, the first light transmitted through a surface of the substrate and the first light transmitted through the groove are destructively interfered and when a second light with a second wave length is incident, the second light transmitted through the surface of the substrate and the second light transmitted through the groove have a phase difference of 180 degrees; and a second phase shift pattern formed in a groove shape having a second depth within the substrate so that when the first light with the first wave length is incident, the first light transmitted through the surface of the substrate and the first light transmitted through the groove have a phase difference of 180 degrees and when the second light with the second wave length is incident, the second light transmitted through the surface of the substrate a

Abstract: A method for manufacturing a photo mask includes forming a mask pattern over a transparent substrate; forming a photoresist over the transparent substrate; subjecting the photoresist to an exposure light from the rear of the transparent substrate to form a photoresist pattern on the mask pattern; and correcting a line width in the mask pattern using the photoresist pattern as a mask.

Abstract: A method for manufacturing a photomask includes forming a resist pattern on a substrate with a light blocking layer formed thereon, etching the light blocking layer using the resist pattern as a mask, measuring a critical dimension (CD) of the resist pattern, irradiating ultraviolet rays on the resist pattern to modify the CD of the resist pattern, thereby forming a CD-modified resist pattern, and etching the light blocking layer using the CD-modified resist pattern.