Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.

Abstract: According to the embodiments provided herein, a method for sputtering a TCO material onto a substrate includes process conditions that produce a textured topography at the interfaces of various layers. The textured topography can include an average roughness from about 5 to about 40 nm. The process conditions can include providing oxygen in the sputtering environment at a flow rate of from 0 to about 30 sccm; or heating the substrate to at least 200; or increasing the magnetic field strength to above 40 mT. The textured topography creates interfacial transition areas which have hybrid physical properties compared to their constituent materials.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr (=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: A system and method for generating a personalized trends module includes steps of: for a given user, producing a social timeline by logging content posted on the given user's accounts on social media sites; analyzing the social timeline for recently posted content to derive an interim summary of first trending topics for the given user; receiving from a content personalization platform an in-stream feed of second trending topics based on the user's recent on-line activity including page views, queries, and clicks; augmenting the social timeline with the second trending topics from the in-stream feed to produce an interim list of third trending topics; ranking the third trending topics by source category using a frequency index; selecting the highest ranking third trending topics from each source category; and presenting a personalized trends module with positions allocated to the highest ranking third trending topics.

Abstract: Methods of curing anti-reflective coatings, and photovoltaic modules produced using the methods, are described. The methods can include liquid metal curing, plasma curing, air knife curing, and flame curing.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: A system and method for generating a personalized trends module includes steps of: for a given user, producing a social timeline by logging content posted on the given user's accounts on social media sites; analyzing the social timeline for recently posted content to derive an interim summary of first trending topics for the given user; receiving from a content personalization platform an in-stream feed of second trending topics based on the user's recent on-line activity including page views, queries, and clicks; augmenting the social timeline with the second trending topics from the in-stream feed to produce an interim list of third trending topics; ranking the third trending topics by source category using a frequency index; selecting the highest ranking third trending topics from each source category; and presenting a personalized trends module with positions allocated to the highest ranking third trending topics.

Abstract: A system and method for generating a personalized trends module includes steps of: for a given user, producing a social timeline by logging content posted on the given user's accounts on social media sites; analyzing the social timeline for recently posted content to derive an interim summary of first trending topics for the given user; receiving from a content personalization platform an in-stream feed of second trending topics based on the user's recent on-line activity including page views, queries, and clicks; augmenting the social timeline with the second trending topics from the in-stream feed to produce an interim list of third trending topics; ranking the third trending topics by source category using a frequency index; selecting the highest ranking third trending topics from each source category; and presenting a personalized trends module with positions allocated to the highest ranking third trending topics.

Abstract: A system and method for generating a personalized trends module includes steps of: for a given user, producing a social timeline by logging content posted on the given user's accounts on social media sites; analyzing the social timeline for recently posted content to derive an interim summary of first trending topics for the given user; receiving from a content personalization platform an in-stream feed of second trending topics based on the user's recent on-line activity including page views, queries, and clicks; augmenting the social timeline with the second trending topics from the in-stream feed to produce an interim list of third trending topics; ranking the third trending topics by source category using a frequency index; selecting the highest ranking third trending topics from each source category; and presenting a personalized trends module with positions allocated to the highest ranking third trending topics.

Abstract: An electrical resistive device, including: an array of titania nanotubes open at an outwardly-directed end formed by anodizing at least a portion of a titanium layer; a plurality of palladium (or other noble metal) clusters having been deposited atop the nanotube array; and the nanotube array mechanically supported by an integral support member. The array of titania nanotubes may include a dopant. An exposure of titania nanotube array to radiant energy emitted within a range of frequencies from visible to ultraviolet, in the presence of oxygen, removes a contaminant, if present. The titanium layer may be deposited atop the integral support; or the unique doped titanium layer can be produced, prior to the anodizing thereof, by depositing titanium along with dopant atop the integral support member by a co-deposition process. Also, supported: method(s) of producing the electrical resistive devices.

Abstract: An electrical resistive device for sensing hydrogen gas, including: an array of titania nanotubes open at an outwardly-directed end formed by anodizing at least a portion of a titanium layer; a plurality of palladium (or other noble metal) clusters having been deposited atop the nanotube array; and the nanotube array mechanically supported by an integral support member. The array of titania nanotubes may include a dopant in an amount less than 1% by mass. An exposure of the titania nanotube array to radiant energy emitted within a range of frequencies from visible to ultraviolet, in the presence of oxygen, removes at least a portion of a contaminant, if present on the titania nanotubes. The titanium layer may be deposited atop the integral support; or the unique doped titanium layer can be produced, prior to the anodizing thereof, by depositing titanium along with dopant atop the integral support member by a co-deposition process. The titanium layer may be a titanium foil or doped titanium foil.