Abstract: A non-volatile storage device includes a substrate, a monolithic three-dimensional memory array of non-volatile storage elements arranged above a portion of the substrate, a plurality of sense amplifiers in communication with the non-volatile storage elements, a plurality of temporary storage devices in communication with the sense amplifiers, a page register in communication with the temporary storage devices, and one or more control circuits. The one or more control circuits are in communication with the page register, the temporary storage devices and the sense amplifiers. The sense amplifiers are arranged on the substrate underneath the monolithic three-dimensional memory array. The temporary storage devices are arranged on the substrate underneath the monolithic three-dimensional memory array. The page register is arranged on the substrate in an area that is not underneath the monolithic three-dimensional memory array.

Abstract: A non-volatile storage system includes technology for skipping programming cycles while programming a page (or other unit) of data. While programming a current subset of the page (or other unit) of data, the system will evaluate whether the next subsets of the page (or other unit) of data should be programmed into non-volatile storage elements or skipped. Subsets of the page (or other unit) of data that should not be skipped are programmed into non-volatile storage elements. Some embodiments include transferring the appropriate data to temporary latches/registers, in preparation for programming, concurrently with the evaluation of whether to program or skip the programming.

Abstract: A non-volatile storage system includes technology for skipping programming cycles while programming a page (or other unit) of data. While programming a current subset of the page (or other unit) of data, the system will evaluate whether the next subsets of the page (or other unit) of data should be programmed into non-volatile storage elements or skipped. Subsets of the page (or other unit) of data that should not be skipped are programmed into non-volatile storage elements. Some embodiments include transferring the appropriate data to temporary latches/registers, in preparation for programming, concurrently with the evaluation of whether to program or skip the programming.

Abstract: A non-volatile storage device includes a substrate, a monolithic three-dimensional memory array of non-volatile storage elements arranged above a portion of the substrate, a plurality of sense amplifiers in communication with the non-volatile storage elements, a plurality of temporary storage devices in communication with the sense amplifiers, a page register in communication with the temporary storage devices, and one or more control circuits. The one or more control circuits are in communication with the page register, the temporary storage devices and the sense amplifiers. The sense amplifiers are arranged on the substrate underneath the monolithic three-dimensional memory array. The temporary storage devices are arranged on the substrate underneath the monolithic three-dimensional memory array. The page register is arranged on the substrate in an area that is not underneath the monolithic three-dimensional memory array.

Abstract: A technique for efficiently handling write operation failures in a memory device which communicates with an external host device allows a page of data to be re-written to a memory array from a page buffer. The host provides user data, a first write address and a write command to the memory device. If the write attempt fails, the host provides a re-write command with a new address, without re-sending the user data to the memory device. Additional data can be received at a data cache of the memory device while a re-write from the page buffer is in progress. The re-written data may be obtained in a copy operation in which the data is read out to the host, modified and written back to the memory device. Additional data can be input to the memory device during the copy operation. Page buffer data can also be modified in place.