Abstract: An integrated circuit includes: a front end of line (FEOL) circuit including a transistor; and a back end of line circuit above the FEOL circuit and including insulator material having an interconnect feature therein. The interconnect feature includes: a core including copper; a first layer between the insulator material and the core, the first layer being distinct from the core; a second layer between the first layer and the core, the second layer being distinct from the first layer and the core, the second layer including a first metal and a second metal different from the first metal; and a capping member on the core and the second layer, the capping member including the second metal. In an embodiment, the first metal and the second metal are part of a solid solution in the second layer. In an embodiment, the first metal is ruthenium and the second metal is cobalt.

Abstract: Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. By controlling the flow rate of various components of the plasma gas flow, plasmas exhibiting desired etching characteristics may be obtained. Such plasmas may be used in single or multistep etching operations, such as recess etching operations that may be used in the production of non-planar microelectronic devices.