Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. The assemblies may include at least one inner capacitive sensor embedded within the electrostatic chuck body at a position proximate a center of the substrate seat. The assemblies may include at least one outer capacitive sensor embedded within the electrostatic chuck body at a position proximate a peripheral edge of the substrate seat.

Abstract: Process chambers and methods for calibrating components of a processing chamber while the chamber volume is under vacuum are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A support plate is positioned under the chamber floor to accommodate for deflection of the chamber floor due to vacuum conditions within the chamber volume. A bellows assembly extending from the chamber floor to the support plate maintains vacuum conditions within the chamber.

Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. The assemblies may include at least one inner capacitive sensor embedded within the electrostatic chuck body at a position proximate a center of the substrate seat. The assemblies may include at least one outer capacitive sensor embedded within the electrostatic chuck body at a position proximate a peripheral edge of the substrate seat.

Abstract: Process chambers and methods for calibrating components of a processing chamber while the chamber volume is under vacuum are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A support plate is positioned under the chamber floor to accommodate for deflection of the chamber floor due to vacuum conditions within the chamber volume. A bellows assembly extending from the chamber floor to the support plate maintains vacuum conditions within the chamber.

Abstract: Multi-station process chamber lids comprising a plurality of station openings are described. A station separation purge channel is around the station openings. A plurality of angular purge channels separate station openings from adjacent station openings. A lid support beam can compensate for deflection of the chamber lid body.

Abstract: A gas distribution apparatus is disclosed. The apparatus includes a faceplate and a blocker plate. An adjustment mechanism is coupled to the blocker plate and is operable to position the blocker plate relative to the faceplate in order to modify a flow profile of a gas flowing therethrough. A method of processing a substrate using the gas distribution is also disclosed.

Abstract: Implementations of the present disclosure generally relate to apparatus and methods for uniform deposition of thin films on substrates. In one implementation, a plasma-processing chamber comprises a chamber body including chamber walls, a chamber floor, and a lid support. The plasma-processing chamber further comprises a substrate support assembly at least partially disposed within the chamber body and configured to support a substrate. The plasma-processing chamber further comprises a lid assembly disposed over the support assembly and positioned on the lid support wherein the lid assembly and the chamber body define a first processing volume. The plasma-processing chamber further comprises a bottom isolation assembly that circumscribes at least a portion of the substrate support assembly and is vertically movable from a loading position to a processing position. A seal is formed between the bottom isolation assembly and the lid assembly when the bottom isolation assembly is in the processing position.

Abstract: Multi-station process chamber lids comprising a plurality of station openings are described. A station separation purge channel is around the station openings. A plurality of angular purge channels separate station openings from adjacent station openings. A lid support beam can compensate for deflection of the chamber lid body.

Abstract: Implementations of the present disclosure generally relate to apparatus and methods for uniform deposition of thin films on substrates. In one implementation, a plasma-processing chamber comprises a chamber body including chamber walls, a chamber floor, and a lid support. The plasma-processing chamber further comprises a substrate support assembly at least partially disposed within the chamber body and configured to support a substrate. The plasma-processing chamber further comprises a lid assembly disposed over the support assembly and positioned on the lid support wherein the lid assembly and the chamber body define a first processing volume. The plasma-processing chamber further comprises a bottom isolation assembly that circumscribes at least a portion of the substrate support assembly and is vertically movable from a loading position to a processing position. A seal is formed between the bottom isolation assembly and the lid assembly when the bottom isolation assembly is in the processing position.