Patents by Inventor Gordon A. Hughmark

Gordon A. Hughmark has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical vapor deposition reactor and process
    Patent number: 4981102
    Abstract: A reactor having a heated liner for producing silicon by chemical vapor deposition (CVD) and means for supplying a gas stream in the turbulent flow region. A gas stream including a silicon-containing compound is passed through a deposition chamber at turbulent flow rates for deposition of silicon on a non-reactive substrate liner heated above the decomposition temperature of the silicon-containing compound. Optionally, the liner is removable from the reactor for separation of deposited metal. Also optionally, the temperature of the liner in situ may be raised above the melting point of the deposited metal for melt out and recovery.
    Type: Grant
    Filed: February 27, 1986
    Date of Patent: January 1, 1991
    Assignee: Ethyl Corporation
    Inventors: Marcelian F. Gautreaux, Walter W. Lawrence, Jr., George A. Daniels, Gordon A. Hughmark