Abstract: A technique for end-user programming includes populating a template with graphically illustrated actions and then invoking a command to generate a screen element based on the template. The screen element is rendered within a computing environment and provides a mechanism for triggering execution of a sequence of user actions. The sequence of user actions is based at least in part on the graphically illustrated actions populated into the template.

Abstract: A computer-implemented software self-assembled system and method for providing an external override and monitoring capability to dynamically self-assembling software containing machines that self-assemble execution sequences and data structures. The method provides an external override machine that can be introduced into a system of self-assembling machines while the machines are executing such that the functionality of the executing software can be changed or paused without stopping the code execution and modifying the existing code. Additionally, a monitoring machine can be introduced without stopping code execution that can monitor specified code execution functions by designated machines and communicate the status to an output device.

Abstract: A computing environment logbook logs events occurring within a computing environment. The events are displayed as a history of past events within the logbook of the computing environment. The logbook provides search functionality to search through the history of past events to find one or more selected past events, and further, enables an undo of the one or more selected past events.

Abstract: A reach and get technique includes invoking a reach command from a reach location within a computing environment. A user can then navigate to an object within the computing environment and invoke a get command on the object. In response to invoking the get command, the computing environment is automatically navigated back to the reach location and the object copied into the reach location.

Abstract: A technique to generate an executable task includes inspecting a task specification data structure to determine what software entities are to be generated to create the executable task, inspecting the task specification data structure to determine how the software entities will be linked after generating the software entities, inspecting the task specification data structure to determine logic to be executed by the software entities, and generating the software entities to create the executable task.

Abstract: A method for dynamically self-assembling and executing software is provided, containing machines that self-assemble execution sequences and data structures. In addition to ordered functions calls (found commonly in other software methods), mutual selective bonding between bonding sites of machines actuates one or more of the bonding machines. Two or more machines can be virtually isolated by a construct, called an encapsulant, containing a population of machines and potentially other encapsulants that can only bond with each other. A hierarchical software structure can be created using nested encapsulants. Multi-threading is implemented by populations of machines in different encapsulants that are interacting concurrently. Machines and encapsulants can move in and out of other encapsulants, thereby changing the functionality. Bonding between machines' sites can be deterministic or stochastic with bonding triggering a sequence of actions that can be implemented by each machine.

Abstract: The shadow contrast sensitivity of the human vision system is simulated by configuring information obtained from an image sensor so that the information may be evaluated with multiple pixel widths in order to produce a machine vision system able to distinguish between shadow edges and abrupt object edges. A second difference of the image intensity for each line of the image is developed and this second difference is used to screen out high frequency noise contributions from the final edge detection signals. These edge detection signals are constructed from first differences of the image intensity where the screening conditions are satisfied. The positional coincidence of oppositely signed maxima in the first difference signal taken from the right and the second difference signal taken from the left is used to detect the presence of an object edge. Alternatively, the effective number of responding operators (ENRO) may be utilized to determine the presence of object edges.

Abstract: A layered semiconductor device with a nonvolatile three dimensional memory comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.

Abstract: In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated.

Abstract: A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space which includes a lowest energy .GAMMA.-valley and a next lowest energy L-valley, each k-vector corresponding to one of the orthogonal directions defined by the planes of said layers and the directions perpendicular thereto. The layer thicknesses of the quantum well layers are selected to provide a superlattice L.sub.

Abstract: A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Abstract: A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

Abstract: An intrinsic semiconductor electro-optical device includes a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8-12 um. The junction consists of a strained-layer superlattice of alternating layers of two different III-V semiconductors having mismatched lattice constants when in bulk form. A first set of layers is either InAs.sub.1-x Sb.sub.x (where x is aobut 0.5 to 0.7) or In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y (where x and y are chosen such that the bulk bandgap of the resulting layer is about the same as the minimum bandgap in the In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y family). The second set of layers has a lattice constant larger than the lattice constant of the layers in the first set.