Patents by Inventor Gordon M. Babson

Gordon M. Babson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micro probe and method of fabricating same
    Patent number: 6400166
    Abstract: A monolithic probe having an integral fine probe point, pressure spring, conductive line, and connector for contacting semiconductor devices to be tested and a method of construction of said probe is described. Integration of a serpentine spring into the probe body reduces breakage and improves contact reliability. Standard, coaxial, triaxial, and Kelvin probes are described. The methods of construction described utilize standard semiconductor processes. The probes may be fabricated to very small dimensions.
    Type: Grant
    Filed: April 15, 1999
    Date of Patent: June 4, 2002
    Assignee: International Business Machines Corporation
    Inventors: Gordon M. Babson, Anthony M. Palagonia
  • MICRO PROBE AND METHOD OF FABRICATING SAME
    Publication number: 20020005728
    Abstract: A monolithic probe having an integral fine probe point, pressure spring, conductive line, and connector for contacting semiconductor devices to be tested and a method of construction of said probe is described. Integration of a serpentine spring into the probe body reduces breakage and improves contact reliability. Standard, coaxial, triaxial, and Kelvin probes are described. The methods of construction described utilize standard semiconductor processes. The probes may be fabricated to very small dimensions.
    Type: Application
    Filed: April 15, 1999
    Publication date: January 17, 2002
    Inventors: GORDON M. BABSON, ANTHONY M. PALAGONIA
  • ROM storage cell and method of fabrication
    Patent number: 5905670
    Abstract: A process and structure are disclosed for a programmable array for use in a read-only memory comprising diode elements and shorted diode elements. The elements are connected across bit and wordlines. The invention utilizes lateral polysilicon diodes and metal silicide layer bridging the junction of pre-selected diodes to short pre-selected diode elements. Programming is accomplished by either forming the silicide layer across the junctions of pre-selected diodes or removing the silicide layer from the junctions of pre-selected diodes.
    Type: Grant
    Filed: May 13, 1997
    Date of Patent: May 18, 1999
    Assignee: International Business Machines Corp.
    Inventors: Gordon M. Babson, Allen W. Brouillette, Richard J. Evans, Robert J. Finch, Philip H. Noel, Richard J. Ross
  • ROM storage cell and method of fabrication
    Patent number: 5847988
    Abstract: A process and structure are disclosed for a programmable array for use in a read-only memory comprising diode elements and shorted diode elements. The elements are connected across bit and wordlines. The invention utilizes lateral polysilicon diodes and metal silicide layer bridging the junction of pre-selected diodes to short pre-selected diode elements. Programming is accomplished by either forming the silicide layer across the junctions of pre-selected diodes or removing the silicide layer from the junctions of pre-selected diodes.
    Type: Grant
    Filed: January 13, 1998
    Date of Patent: December 8, 1998
    Assignee: International Business Machines Corporation
    Inventors: Gordon M. Babson, Allen W. Brouillette, Richard J. Evans, Robert J. Finch, Philip H. Noel, Richard J. Ross