Abstract: Aspects relate to a control process that may be utilized to benchmark and quantitatively measure global corporate and industrial engagement in the transition between an incumbent High Carbon Economy (HCE) and a rapidly developing Low Carbon Economy (LCE). Embodiments may implement a 9-point industrial engagement matrix configured to filter entities based on the criteria, such as: engagement, action, and event criteria. The determination may comprise categorizing with the engagement criteria, a first output of the first entity as one of a good, a product, or a service. Further implementations may determine with the action criteria, that the first output satisfies one of a plurality of global event conditions comprising at least one of: climate change, resource depletion and environmental erosion. Still other embodiments may correlate an industrial action condition to the global event condition. For example, the industrial actions may comprise at least one of: adapting, mitigating, and remediating.

Abstract: Aspects relate to a control process that may be utilized to benchmark and quantitatively measure global corporate and industrial engagement in the transition between an incumbent High Carbon Economy (HCE) and a rapidly developing Low Carbon Economy (LCE). Embodiments may implement a 9-point industrial engagement matrix configured to filter entities based on the criteria, such as: engagement, action, and event criteria. The determination may comprise categorizing with the engagement criteria, a first output of the first entity as one of a good, a product, or a service. Further implementations may determine with the action criteria, that the first output satisfies one of a plurality of global event conditions comprising at least one of: climate change, resource depletion and environmental erosion. Still other embodiments may correlate an industrial action condition to the global event condition. For example, the industrial actions may comprise at least one of: adapting, mitigating, and remediating.

Abstract: One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

Abstract: One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

Abstract: One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.

Abstract: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing.

Abstract: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

Abstract: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

Abstract: A device for baiting insects which includes an anchor tube that is placed in the ground, a base plate that attaches to the anchor tube, a cover that attaches to the base plate, a bait cup placed in said anchor tube and that sits beneath the ground, and a termite media support rod that attaches to the bait cup and sits in the anchor tube, beneath the ground, the key to open the cover and access the bait, the anchor tube being molded into one integrated piece with a continuous spiral fin or threaded member that acts as a screw mechanism when inserting the station into the ground and the base plate, which sits at ground level, includes insect entry openings; a cover covers the base plate and bait cup, protecting the bait from the elements; and optionally a termite media support rod, which includes a disk molded on the bottom thereof used to hold material for termite monitoring.

Abstract: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

Abstract: A device for baiting insects which includes an anchor tube that is placed in the ground, a base plate that attaches to the anchor tube, a cover that attaches to the base plate, a bait cup placed in said anchor tube and that sits beneath the ground, and a termite media support rod that attaches to the bait cup and sits in the anchor tube, beneath the ground, the key to open the cover and access the bait, the anchor tube being molded into one integrated piece with a continuous spiral fin or threaded member that acts as a screw mechanism when inserting the station into the ground and the base plate, which sits at ground level, includes insect entry openings; a cover covers the base plate and bait cup, protecting the bait from the elements; and optionally a termite media support rod, which includes a disk molded on the bottom thereof used to hold material for termite monitoring.

Abstract: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

Abstract: Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.

Abstract: A device for baiting insects which includes an anchor tube that is placed in the ground, a base plate that attaches to the anchor tube, a cover that attaches to the base plate, a bait cup placed in said anchor tube and that sits beneath the ground, and a termite media support rod that attaches to the bait cup and sits in the anchor tube, beneath the ground, the key to open the cover and access the bait, the anchor tube being molded into one integrated piece with a continuous spiral fin or threaded member that acts as a screw mechanism when inserting the station into the ground and the base plate, which sits at ground level, includes insect entry openings; a cover covers the base plate and bait cup, protecting the bait from the elements; and optionally a termite media support rod, which includes a disk molded on the bottom thereof used to hold material for termite monitoring.

Abstract: Chemical vapor deposition methods utilizing preheating of one or more of the reactant gases used to form deposited layers, chemical vapor deposition systems to perform the methods, and apparatus containing deposited layers produced using the methods. The reactant gases contain at least one chemical vapor deposition precursor. Heating one or more of the reactant gases prior to introduction to the reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer with reactant gases containing the precursors of titanium tetrachloride and ammonia.

Abstract: A process is provided for producing high purity benzene and high purity paraxylene from a hydrocarbon feed. In one aspect, the process comprises: (a) reforming a hydrocarbon feed using either a monofunctional catalyst or a bifunctional catalyst to provide one or more reformate streams; (b) fractionating the reformate stream to provide a toluene stream, a benzene stream, and a xylene stream; (c) subjecting the toluene stream to disproportionation; (d) purifying the benzene stream by extraction followed by distillation to provide a high purity benzene product; and (e) purifying the xylene stream by simulated moving bed countercurrent adsorption followed by crystallization to provide a high purity paraxylene product.