Abstract: An optical system mount assembly can include a first post and a movable mount configured to mount an optical element, the moveable mount being configured to move relative to the first post assembly between a first position and a second position. The assembly can include a first magnetic latch system member disposed on or within the first post, and a second magnetic latch system member disposed on or within the moveable mount such that the first magnetic latch system member magnetically interacts with the second magnetic latch system member to magnetically latch the moveable mount to the first post in the first position.

Abstract: An optical system mount assembly can include a first post and a movable mount configured to mount an optical element, the moveable mount being configured to move relative to the first post assembly between a first position and a second position. The assembly can include a first magnetic latch system member disposed on or within the first post, and a second magnetic latch system member disposed on or within the moveable mount such that the first magnetic latch system member magnetically interacts with the second magnetic latch system member to magnetically latch the moveable mount to the first post in the first position.

Abstract: A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

Abstract: A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

Abstract: A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

Abstract: A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

Abstract: Circuits, methods, and apparatus for power MOSFETs having a high cell density for a high current carrying capability while maintaining a low pinched-base resistance. One device employs a number of transistor cells having varying mesa (regions between trench gates) sizes. A heavy body etch is utilized in larger cells to reduce the pinched-base resistance. This etch removes silicon in the mesa region, which is then replaced with lower-impedance aluminum. A number of smaller cells that do not receive this etch are used to increase device current capacity. Avalanche current is directed to the larger, lower pinched base cells by ensuring these cells have a lower BVDSS breakdown voltage. The large cell BVDSS can be varied by adjusting the critical dimension or width of the trench gates on either side of the wider mesas, or by adjusting the depth of the heavy body etch.

Abstract: The articulators of the present invention provide relative manipulation of dental models for simulation of occlusal and masticatory movements of the mouth. The full arch articulator with a removable wall consists of four parts—a lower part, an upper part, a middle part, and a rear part. The lower part is comprised of a full arch box, a pair of female hinge assemblies, and an incisal guide plate. The full arch box has an open bottom and an insert at the top with a series of grooves. The upper part is comprised of a spherical inner surface, a spherically concaved area on the outer surface, a square box with an open top, a vertical support with sides of cylindrical halves, and an incisal pin hole. The middle part is snap-seated on top of the full arch box in the lower part. The rear part is comprised of a pair of extension arms to receive the upper part for connection and a male hinge bar which is connected to the lower part.

Abstract: A spoken language interface comprises an automatic speech recognition system and a text to speech system controlled by a voice controller. The ASR and TTS are connected to a telephony system which receives user speech via a communications link. A dialogue manager is connected to the voice controller and provides control of dialogue generated in response to user speech. The dialogue manager is connected to application managers each of which provide an interface to an application with which the user can converse. Dialogue and grammars are stored in a database as data and are retrieved under the control of the dialogue manager and a personalisation and adaptive learning module. A session and notification manager records session details and enables re-connection of a broken conversation at the point at which the conversation was broken.