Abstract: This invention relates to a method of forming a local interconnect and a semiconductor device comprising a local interconnect. The semiconductor device comprises: a) a dielectric outside layer; and b) a conductivity structure comprising: i) at least one barrier layer having a thickness of 10-200 ? on a surface of said oxide layer; and ii) a conductive layer comprising titanium, on said at least one barrier layer, said at least one barrier layer preventing diffusion of oxygen from said dielectric oxide layer into said conductive layer and having a corresponding oxide that is not soluble in said conductive layer.

Abstract: The invention concerns a method of forming a layer of metal on a substrate and fill the via with high throughput. A layer of metal can be formed on a substrate using sequentially a cold deposition step, a slow hot deposition step and a rapid hot deposition step. The cold deposition step need only be performed for a time sufficient to deposit a seed layer of metal over the entire surface on which the metal layer is to be formed. In the slow hot deposition step, further metal is deposited at a power allowing for surface diffusion of the deposited metal, which is then followed by a rapid hot deposition of metal under bulk diffusion conditions.

Abstract: A method of forming metallic layers on a substrate includes the steps of forming a first layer including a first metal on the substrate; cooling the first layer for a period of time sufficient to suppress formation of an intermetallic phase; and forming a second layer including a second metal distinct from the first metal on the first layer. The cooling step decreases the roughness of the resultant stacked structure by suppressing the formation of an intermetallic phase layer between the two metallic layers and by suppressing “bumps” or other surface irregularities that may form at relatively reactive grain boundaries in the first layer.

Abstract: A method of forming metallic layers on a substrate includes the steps of forming a first layer including a first metal on the substrate; cooling the first layer for a period of time sufficient to suppress formation of an intermetallic phase; and forming a second layer including a second metal distinct from the first metal on the first layer. The cooling step decreases the roughness of the resultant stacked structure by suppressing the formation of an intermetallic phase layer between the two metallic layers and by suppressing “bumps” or other surface irregularities that may form at relatively reactive grain boundaries in the first layer.

Abstract: A method of forming metallic layers on a substrate includes the steps of forming a first layer including a first metal on the substrate; cooling the first layer for a period of time sufficient to suppress formation of an intermetallic phase; and forming a second layer including a second metal distinct from the first metal on the first layer. The cooling step decreases the roughness of the resultant stacked structure by suppressing the formation of an intermetallic phase layer between the two metallic layers and by suppressing “bumps” or other surface irregularities that may form at relatively reactive grain boundaries in the first layer.

Abstract: The invention concerns a method of forming a layer of metal on a substrate and fill the via with high throughput. A layer of metal can be formed on a substrate using sequentially a cold deposition step, a slow hot deposition step and a rapid hot deposition step. The cold deposition step need only be performed for a time sufficient to deposit a seed layer of metal over the entire surface on which the metal layer is to be formed. In the slow hot deposition step, further metal is deposited at a low power allowing for surface diffusion of the deposited metal, which is then followed by a rapid hot deposition of metal under bulk diffusion conditions.