Abstract: Silicon carbide particles are produced by reacting a gaseous silicon compound or granular silicon with a carbon compound at a high temperature. In the reaction, the amount of free carbon content in the resultant silicon carbide particles can be controlled by monitoring the amount of unsaturated hydrocarbon such as acetylene, as a by-product. Moreover, silicon carbide particles can contain boron dispersed uniformly in the particles by a two step process comprising first reacting a silicon source and a boron source without a carbon source in a first reaction zone, to form boron-containing silicon particles, and second, reacting the resultant particles with a carbon source in a second reaction zone.

Abstract: Silicon carbide particles are produced by reacting a gaseous silicon compound or granular silicon with a carbon compound at a high temperature. In the reaction, the amount of free carbon content in the resultant silicon carbide particles can be controlled by monitoring the amount of unsaturated hydrocarbon such as acetylene, as a by-product. Moreover, silicon carbide particles can contain boron dispersed uniformly in the particles by a two step process comprising first reacting a silicon source and a boron source without a carbon source in a first reaction zone, to form boron-containing silicon particles, and second, reacting the resultant particles with a carbon source in a second reaction zone.

Abstract: Silicon carbide particles are produced by reacting a gaseous silicon compound or granular silicon with a carbon compound at a high temperature. In the reaction, the amount of free carbon content in the resultant silicon carbide particles can be controlled by monitoring the amount of unsaturated hydrocarbon such as acetylene, as a by-product. Moreover, silicon carbide particles can contain boron dispersed uniformly in the particles by a two step process comprising first reacting a silicon source and a boron source without a carbon source in a first reaction zone, to form boron-containing silicon particles, and second, reacting the resultant particles with a carbon source in a second reaction zone.

Abstract: Ultrafine particles of metals, metallic compounds, and ceramics can be produced by heating a starting material supplied hermetically with a plurality of direct current plasma currents combined at a central axis of a work coil for generating high frequency induction plasma positioned under the direct current plasma generated zone. Apparatuses used therefor are also disclosed.

Abstract: The present invention relates to a method for manufacturing a refractory erial having numerous through pores in a certain direction. The refractory material is manufactured by covering a woven fabric composed of combustible weft and/or warp threads with a slurry of a refractory material, and then drying and baking the coated fabric to burn out the combustible yarns so that the desired through pores may be obtained in directions corresponding to the direction of the burned out weft and warp threads.